Process for making a shielded magnetoresistive sensor
First Claim
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1. The method for making a shielded magnetoresistive sensor comprising the steps of:
- depositing a layer of a magnetic alloy comprising 3 to 6% aluminum, 6 to 12% silicon and the remainder iron to form a first shield member;
heat treating said layer of a magnetic alloy at a temperature greater than 400°
C. for a predetermined time to enhance the magnetic properties of said first shield member;
depositing a first layer of a suitable electrically insulating material over said first shield member;
depositing, in the presence of a magnetic field, a thin film of a magnetoresistive conductive layer formed of a magnetic material, said magnetic field being operable to orient said layer of magnetic material in a preferred direction;
depositing a second layer of a suitable electrically insulating material over said layer of magnetoresistive material; and
depositing a layer of soft magnetic material over said second layer of said electrically insulating material to form a second shield member.
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Abstract
The method for making a shielded magnetoresistive (MR) sensor in which the first shield is made of sendust and the second shield is made of permalloy. The method comprises the stages of depositing a layer of sendust to form a first shield; heat treating the sendust layer at a temperature greater than 400° C.; depositing a first electrically insulating layer; depositing, in the presence of a magnetic field, a MR layer; depositing a second layer of electrically insulating material; and, depositing a layer of permalloy to form the second shield.
33 Citations
10 Claims
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1. The method for making a shielded magnetoresistive sensor comprising the steps of:
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depositing a layer of a magnetic alloy comprising 3 to 6% aluminum, 6 to 12% silicon and the remainder iron to form a first shield member; heat treating said layer of a magnetic alloy at a temperature greater than 400°
C. for a predetermined time to enhance the magnetic properties of said first shield member;depositing a first layer of a suitable electrically insulating material over said first shield member; depositing, in the presence of a magnetic field, a thin film of a magnetoresistive conductive layer formed of a magnetic material, said magnetic field being operable to orient said layer of magnetic material in a preferred direction; depositing a second layer of a suitable electrically insulating material over said layer of magnetoresistive material; and depositing a layer of soft magnetic material over said second layer of said electrically insulating material to form a second shield member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Current AssigneeHitachi Global Storage Technologies Netherlands BV (Western Digital Corporation)
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Original AssigneeInternational Business Machines Corporation
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InventorsYen, Edward T., Horng, Cheng T., Bajorek, Christopher H.
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Primary Examiner(s)Tupper, Robert S.
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Application NumberUS07/249,916Time in Patent Office567 DaysField of Search360/113, 338/32 R, 324/252, 29/603US Class Current360/319CPC Class CodesG11B 5/3903 using magnetic thin film la...Y10T 29/49034 Treating to affect magnetic...Y10T 29/49044 Plural magnetic deposition ...
