Multiple-bank memory architecture and systems and methods using the same
DCFirst Claim
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1. A memory comprising:
- a first plurality of columns of memory cells each including at least one conductive bitline;
a second plurality of columns of memory cells each including at least one conductive bitline; and
a plurality of gates organized in independently controlled groups for selectively coupling said bitlines of a selected group of said first plurality of columns with a group of said bitlines of said second plurality of columns for transferring a at least one bit of data from a selected cell of said first plurality of columns of cells to a selected cell of said second plurality of columns of cells.
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Abstract
A memory 20 is disclosed including a first column of memory cells including a conductive bitline 202 and a second column of memory cells also including a conductive bitline 202. A gate 203 is provided for selectively coupling the bitline 202 of the first column with the bitline 202 of the second column for transferring a bit of data from a selected cell of the first column to a selected cell of the second column.
35 Citations
30 Claims
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1. A memory comprising:
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a first plurality of columns of memory cells each including at least one conductive bitline; a second plurality of columns of memory cells each including at least one conductive bitline; and a plurality of gates organized in independently controlled groups for selectively coupling said bitlines of a selected group of said first plurality of columns with a group of said bitlines of said second plurality of columns for transferring a at least one bit of data from a selected cell of said first plurality of columns of cells to a selected cell of said second plurality of columns of cells. - View Dependent Claims (2, 3, 4, 5, 14, 15)
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6. A memory subsystem comprising:
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a first subarray of memory cells arranged in rows and columns, each said column associated with a conductive bitline and each said row associated with a conductive wordline; a second subarray of memory cells arranged in rows and columns, each said column associated with a conductive bitline and each said row associated with a conductive wordline; circuitry for independently coupling selected groups of said bitlines of said first subarray with corresponding groups of said bitlines of said second subarray; a first column decoder coupled to said bitlines of said first subarray for randomly accessing selected cells along a selected row in said first subarray; and a second column decoder coupled to said bitlines of said second subarray for randomly accessing selected cells along a selected row in said second subarray. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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16. A memory device comprising:
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a first subarray of rows and columns of dynamic random access memory cells, each said column including a bitline and each said row including a wordline; a second subarray of rows and columns of dynamic random access memory cells, each said column including a bitline and each said row including a wordline; a first row decoder for selecting a said wordline in said first subarray in response to a first set of row addresses; a second row decoder for selecting a said wordline in said second subarray in response to a second set of row addresses; a first column decoder for selecting at least one bitline in said first subarray for random access in response to a first set of column addresses; a second column decoder for selecting at least one bitline in said second subarray for random access in response to a second set of column addresses; a first plurality of gates for selectively coupling at least one bitline of a corresponding group of bitlines in said first subarray with at least one bitline of a corresponding group of bitlines in said second subarray, said first plurality of gates controlled by a first control signal; and a second plurality of gates for selectively coupling at least one bitline in a corresponding group of bitlines in said first subarray with at least one bitline of a corresponding group of bitlines in said second subarray. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A processing system comprising:
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a memory device including; a first subarray of memory cells arranged in rows and columns, each said column associated with a conductive bitline and each said row associated with a conductive wordline; a second subarray of memory cells arranged in rows and columns, each said column associated with a conductive bitline and each said row associated with a conductive wordline; circuitry for randomly accessing at least one selected cell in said first subarray; circuitry for randomly accessing at least one selected cell in said second subarray; circuitry for coupling a selected one of said bitlines of said first subarray with a selected one of said bitlines of said second subarray for transferring data from an accessed cell of said first subarray to an accessed cell of said second subarray; a first display device for displaying data received from said first subarray; and a second display device for displaying data received from said second subarray. - View Dependent Claims (25, 26, 27)
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28. A method for performing a data transfer in a memory subsystem including a first subarray of memory cells arranged in rows and columns, each column associated with a conductive bitline and each row associated with a conductive wordline, a second subarray of memory cells arranged in rows and columns, each column associated with a conductive bitline and each row associated with a conductive wordline, and a plurality gates partitioned into at least two independently controllable groups, each group of gates for coupling selected ones of the bitlines of the first subarray with corresponding ones of the bitlines of said second subarray, the method comprising the steps of:
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activating a selected wordline in the first subarray; sensing data at the bitlines of the first subarray from the cells of the selected row; activating a selected group of the gates to couple the sensed data from ones of the bitlines of the first subarray to selected ones of the bitlines of the second subarray; and activating a selected wordline of the second subarray to write the data from the first subarray into cells of a selected row and the columns associated with the selected bitlines of the second subarray. - View Dependent Claims (29, 30)
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Specification