Process optimization in gas phase dry etching
DC CAFCFirst Claim
Patent Images
1. A device fabrication method comprising the steps of:
- providing a plasma etching apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface;
etching said top film surface to define a relatively non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said relatively non-uniform etching profile on said substrate, said etching comprising a reaction between a gas phase etchant and said film; and
extracting a surface reaction rate constant from said etch rate data, and using said surface reaction rate constant in the fabrication of a device.
1 Assignment
Litigations
5 Petitions
Accused Products
Abstract
A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.
30 Citations
29 Claims
-
1. A device fabrication method comprising the steps of:
-
providing a plasma etching apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; etching said top film surface to define a relatively non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said relatively non-uniform etching profile on said substrate, said etching comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data, and using said surface reaction rate constant in the fabrication of a device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 14, 21)
-
-
10. A method of designing a reactor comprising the steps of:
-
providing a first plasma etching apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; etching said top film surface to define a relatively non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said relatively non-uniform etching profile on said film of said substrate, said etching comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data, and using said surface reaction rate constant in designing a second plasma etching apparatus. - View Dependent Claims (11, 12, 13, 15, 16, 17, 18, 19)
-
-
20. A substrate fabrication method, using a plasma etching apparatus, said method comprising:
-
providing a substrate selected from a group consisting of a semiconductor wafer, a plate, and a flat panel display, said substrate comprising a top surface; forming a film overlying said top surface, said film comprising a top film surface; etching said top film surface to define a relatively non-uniform profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said relatively non-uniform etching profile of said film on said substrate, said etching comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data, and using said surface reaction rate constant.
-
-
22. A method of fabricating an integrated circuit device, using a plasma etching apparatus, said method comprising:
-
providing a uniformity value and a surface reaction rate constant for an etching reaction, said etching reaction including a substrate and etchant species; defining etching parameters providing said uniformity value; and adjusting at least one of said etching parameters using said surface reaction rate constant to produce a selected etching rate; wherein said etching rate providing an etching condition for fabrication of an integrated circuit device. - View Dependent Claims (23, 24, 25)
-
-
26. A process for fabricating a device using a plasma etching apparatus, said device being fabricated by use of a surface reaction rate constant, said surface reaction rate constant being derived from a method comprising:
-
providing a plasma etching apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; etching said top surface at a temperature to define a relatively non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defined a position from said relatively non-uniform etching profile on said film of said substrate, said etching comprising a reaction between a gas phase etchant and said film; and extracting from said etching rate data a surface reaction rate constant for said temperature. - View Dependent Claims (27, 28, 29)
-
Specification