Charge-coupled device image sensor
First Claim
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1. A charge-coupled device image sensor comprising:
- a substrate;
a buried channel region of a first conductivity type in the substrate having a predetermined depth, the buried channel region transferring signal charges;
a first surface channel region of a second conductivity type on the buried channel region, the first surface channel region transferring dark current charges;
a first high concentration impurity region of the first conductivity type spaced from the first surface channel region, the first high concentration impurity region removing dark current charges from the first surface channel region and the first high concentration impurity region having an impurity concentration higher than the buried channel region;
a second surface channel region of the second conductivity type having a predetermined depth in the substrate between the first surface channel region and the first high concentration impurity region; and
a second high concentration impurity region of a second conductivity type in the substrate and below the first high concentration impurity region.
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Abstract
A charge-coupled device image sensor includes a substrate, a buried channel region of a first conductivity type, formed in the substrate to a predetermined depth, for transferring signal charges, a first high concentration impurity region of a second conductivity type, formed in the substrate adjacent to the buried channel region, forming a channel stop, a first surface channel region of the second conductivity type, formed on the buried channel region, for transferring dark current charges, a second high concentration impurity region of the first conductivity type, formed on the first high concentration impurity region, for removing dark current charges from the surface channel region, and a second surface channel region of the second conductivity type formed to a predetermined depth in the substrate between the second high concentration impurity region and the first surface channel region.
25 Citations
21 Claims
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1. A charge-coupled device image sensor comprising:
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a substrate; a buried channel region of a first conductivity type in the substrate having a predetermined depth, the buried channel region transferring signal charges; a first surface channel region of a second conductivity type on the buried channel region, the first surface channel region transferring dark current charges; a first high concentration impurity region of the first conductivity type spaced from the first surface channel region, the first high concentration impurity region removing dark current charges from the first surface channel region and the first high concentration impurity region having an impurity concentration higher than the buried channel region; a second surface channel region of the second conductivity type having a predetermined depth in the substrate between the first surface channel region and the first high concentration impurity region; and a second high concentration impurity region of a second conductivity type in the substrate and below the first high concentration impurity region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A charge-coupled device image sensor comprising:
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a low concentration substrate of a first conductivity type; a low concentration well of a second conductivity type on the substrate; a light-detection region of the first conductivity type generating signal charges in the well; a buried channel region of the first conductivity type spaced apart from the light-detection region in the well; a first high concentration impurity region of the second conductivity type on the light-detection region reducing dark current charges; a first surface channel region of the second conductivity type on the buried channel region; a second high concentration impurity region of the second conductivity type in the well; a third high concentration impurity region of the first conductivity type on the second high concentration impurity region, the third high concentration impurity region sweeping the dark current charges; and a second surface channel region of the second conductivity type to a predetermined depth in the well between the third concentration impurity region and the first surface channel region. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a semiconductor substrate of a first conductivity type; a buried channel region of a second conductivity type in the substrate to a predetermined depth; a first high concentration impurity region of the second conductivity type spaced apart from the buried channel region; a first surface channel region of the first conductivity type on the buried channel region; a second high concentration impurity region of the first conductivity type below the first high concentration impurity region; a second surface channel region of the first conductivity type between the first high concentration impurity region and the first surface channel region; a third high concentration impurity region of the second conductivity type adjacent to the first surface channel region opposite the second surface channel region; a capacitor electrode above the first surface channel region and the second surface channel region; and a read-out gate above the first surface channel region and adjacent to the capacitor electrode. - View Dependent Claims (21)
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Specification
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Current AssigneeIntellectual Ventures II LLC (Intellectual Ventures LLC)
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Original AssigneeLG Semico Company Limited (SK Hynix Inc.)
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InventorsShinji, Uya
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Primary Examiner(s)Munson, Gene M.
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Application NumberUS08/530,676Time in Patent Office1,169 DaysField of Search257/222, 257/223, 257/229, 257/231, 257/232, 257/233, 257/432, 257/435, 257/297, 257/291US Class Current257/223CPC Class CodesH01L 27/14887 Blooming suppression
