Semiconductor device having an elevated active region formed in an oxide trench and method of manufacture thereof
DC CAFCFirst Claim
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1. A process of forming a semiconductor device, the process comprising:
- forming a plurality of gate electrodes on a substrate, an active region of the substrate being defined by adjacent walls of two gate electrodes;
forming an insulating layer over the gate electrodes and the active region;
etching a trench in the insulating layer to expose a portion of the active region of the substrate;
filling the trench with a polysilicon material; and
doping the polysilicon material to form an elevated active region above the active region of the substrate.
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Abstract
A process for forming a semiconductor device having an elevated active region is disclosed. The process includes forming a plurality of gate electrodes on the semiconductor substrate and disposing a thick oxide layer over the gate electrodes. A trench is formed in a thick oxide layer and is filled with a polysilicon material. The polysilicon material is subsequently doped in order to form an elevated active region above an active region of the substrate.
7 Citations
20 Claims
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1. A process of forming a semiconductor device, the process comprising:
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forming a plurality of gate electrodes on a substrate, an active region of the substrate being defined by adjacent walls of two gate electrodes; forming an insulating layer over the gate electrodes and the active region; etching a trench in the insulating layer to expose a portion of the active region of the substrate; filling the trench with a polysilicon material; and doping the polysilicon material to form an elevated active region above the active region of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 12, 13, 14)
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10. A process of forming a metal-oxide-semiconductor (MOS) device having an elevated source/drain region, the process comprising:
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forming a gate oxide layer on a surface of a substrate; forming a plurality of gate electrodes on a surface of the gate oxide layer to form a resultant structure, adjacent sides of two gate electrodes defining an active region of the substrate for the formation of a source/drain region in the substrate; forming an oxide layer over the resultant structure; forming a trench in the oxide layer between the adjacent sides of the two gate electrodes to expose the surface of the substrate over a portion of the active region; filling the trench with a polysilicon material; implanting a dopant into the polysilicon material to form the elevated source/drain region and the source/drain in the active region of the substrate; forming a silicide layer over a surface of the elevated source/drain region. - View Dependent Claims (11, 15, 16)
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17. A process of forming a semiconductor device, comprising:
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forming a plurality of gate electrodes on a substrate, an active region of the substrate being defined by adjacent walls of two gate electrodes; forming an insulating layer having a thickness greater than a thickness of the gate electrodes over the gate electrodes and the active region; removing portions of the insulating layer to form a trench over a portion of the active region of the substrate and leaving portions of the insulating layer between edges of the trench and sidewalls of the gate electrodes; filling the trench with a polysilicon material; and doping the polysilicon material to form an elevated active region above the active region of the substrate. - View Dependent Claims (18, 19, 20)
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Specification