Process for forming a semiconductor device
DC
First Claim
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1. A process for forming a semiconductor device comprising the steps of:
- placing a substrate in a processing chamber;
forming a first conductive film that includes a refractory metal and nitrogen over the substrate, wherein;
the first conductive film includes a first portion and a second portion;
the first portion lies closer to the substrate and has a first nitrogen atomic percentage;
the second portion lies further from the substrate has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and
a change between the first nitrogen atomic percent and the second atomic percent within the first conductive film is essentially continuous; and
forming a second conductive film over the first conductive film, wherein the second conductive film includes mostly copper.
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Abstract
A semiconductor device comprises a substrate (100), first conductive film (22 and 32) over the substrate (100), and a second conductive film (54 and 64) over the first conductive film (22 and 32). The first conductive film includes a refractory metal and nitrogen. The first conductive film has a first portion (22) that lies closer to the substrate and a second portion (32) that lies further from the substrate. The nitrogen percentage for the second portion (32) is lower than the nitrogen atomic percentage for the first portion (22). The second conductive film (54 and 64) includes mostly copper. The combination of portions (22 and 32) within the first conductive film provides a good diffusion barrier (first portion) and has good adhesion (second portion) with the second conductive film (54 and 64).
137 Citations
22 Claims
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1. A process for forming a semiconductor device comprising the steps of:
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placing a substrate in a processing chamber; forming a first conductive film that includes a refractory metal and nitrogen over the substrate, wherein; the first conductive film includes a first portion and a second portion; the first portion lies closer to the substrate and has a first nitrogen atomic percentage; the second portion lies further from the substrate has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and a change between the first nitrogen atomic percent and the second atomic percent within the first conductive film is essentially continuous; and forming a second conductive film over the first conductive film, wherein the second conductive film includes mostly copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A process for forming a semiconductor device comprising the steps of:
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forming a patterned insulating layer over a substrate, wherein the patterned insulating layer includes an opening; forming a first conductive film that includes tantalum and nitrogen, wherein; the first conductive film includes a first portion and a second portion; the first portion lies closer to the substrate and has a first nitrogen atomic percentage; and the second portion lies further from the substrate and has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and forming a second conductive film on the first conductive film, wherein the second conductive film includes mostly copper; polishing the second conductive film to remove the second conductive film overlying the patterned insulating layer outside of the opening; and polishing the first conductive film to remove the first conductive film overlying the patterned insulating layer outside of the opening. - View Dependent Claims (19, 20, 21, 22)
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Specification
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Litigation Data
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Current AssigneeNorth Star Innovations Inc. (Wi-LAN Inc.)
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Original AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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InventorsZhang, Jiming, Denning, Dean J.
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Primary Examiner(s)Bowers, Charles
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Assistant Examiner(s)NGUYEN, THANH T
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Application NumberUS08/996,000Time in Patent Office477 DaysField of Search438/653, 438/627-28, 438/654, 438/656, 438/643, 438/644, 438/645, 438/648, 438/680, 438/681, 438/658, 438/687US Class Current438/687CPC Class CodesH01L 21/76807 for dual damascene structuresH01L 21/76838 characterised by the format...H01L 21/76841 Barrier, adhesion or liner ...H01L 21/76843 formed in openings in a die...H01L 21/76873 for electroplatingH01L 21/76877 Filling of holes, grooves o...H01L 23/485 consisting of layered const...H01L 23/53238 Additional layers associate...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
