Semiconductor image sensor
DC
First Claim
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1. An image sensor comprising:
- a substrate of a first conductivity type having a first doping concentration;
an enhancement layer of the first conductivity type having a second doping concentration lower than the first doping concentration, the enhancement layer on the substrate;
a first MOS transistor on the enhancement layer;
a first well on the enhancement layer, the first well having the first conductivity type and a third doping concentration that is less than the first doping concentration and greater than the second doping concentration wherein the first MOS transistor is outside the first well; and
a pinned photodiode on the enhancement layer wherein a portion of the pinned photodiode forms a source of the first MOS transistor.
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Abstract
An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).
133 Citations
4 Claims
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1. An image sensor comprising:
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a substrate of a first conductivity type having a first doping concentration; an enhancement layer of the first conductivity type having a second doping concentration lower than the first doping concentration, the enhancement layer on the substrate; a first MOS transistor on the enhancement layer; a first well on the enhancement layer, the first well having the first conductivity type and a third doping concentration that is less than the first doping concentration and greater than the second doping concentration wherein the first MOS transistor is outside the first well; and a pinned photodiode on the enhancement layer wherein a portion of the pinned photodiode forms a source of the first MOS transistor. - View Dependent Claims (2)
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3. An image sensor comprising:
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a substrate; a pinned photodiode on the substrate; a dielectric layer overlying the pinned photodiode; and a silicide layer on a portion of the image sensor wherein an area overlying the pinned photodiode is devoid of the silicide layer. - View Dependent Claims (4)
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Specification
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Litigation Data
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Current AssigneeTumbleweed Holdings LLC (Equitable IP Corporation)
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Original AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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InventorsDrowley, Clifford I., Swenson, Mark S., Patterson, Jennifer J., Ramaswami, Shrinath
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Primary Examiner(s)Tran, Minh Loan
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Assistant Examiner(s)Nguyen, Cuong Quang
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Application NumberUS08/970,720Time in Patent Office816 DaysField of Search257/290-293, 257/53, 257/232-233, 257/369, 257/225-230US Class Current257/292CPC Class CodesH01L 27/14609 Pixel-elements with integra...
