Dissipative ceramic bonding tip
DC CAFC
First Claim
Patent Images
1. A tip having a dissipative material for use in wire bonding machines for connecting leads on integrated circuit bonding pads, wherein said dissipative material has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough to avoid current flow large enough to damage said device being bonded.
2 Assignments
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3 Petitions
Reexaminations
Accused Products
Abstract
Dissipative ceramic bonding tips for wire bonding electrical connections to bonding pads on integrated circuits chips and packages are disclosed. In accordance with the principles of the present invention, to avoid damaging delicate electronic devices by any electrostatic discharge, an ultrasonic bonding wedge tool tip must conduct electricity at a rate sufficient to prevent charge buildup, but not at so high a rate as to overload the device being bonded. For best results, a resistance in the tip assembly itself should range from 105 to 1012 ohms. In addition, the wedges must also have specific mechanical properties to function satisfactorily.
96 Citations
51 Claims
- 1. A tip having a dissipative material for use in wire bonding machines for connecting leads on integrated circuit bonding pads, wherein said dissipative material has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough to avoid current flow large enough to damage said device being bonded.
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9. A tip having
a dissipative material for use in wire bonding machines for connecting leads on integrated circuit bonding pads, wherein said dissipative material is a doped semiconductor which is titanium nitride carbide, has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough to avoid current flow large enough to damage said device being bonded, and is formed on a conducting core of cobalt bonded tungsten carbide.
- 10. A dissipative ceramic for use in capillary wedge-type wire bonding machines for connecting leads on integrated circuit bonding pads, wherein said dissipative ceramic is electrically dissipative.
- 16. A dissipative ceramic comprising aluminum oxide (A2O3) zirconium oxide (ZrO2).
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19. A method of manufacturing a dissipative bonding tip comprising:
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forming a dissipative material as a bonding tip that has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough to avoid current flow large enough to damage said device being bonded. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 31, 32, 33, 34, 35, 36)
mixing fine particles of a composition appropriate for forming said dissipative material with a solvent, a dispersant, a binder, and a sintering aid to form a mixture;
molding the mixture into at least one wedge;
drying the at least one wedge;
providing a heat-treating atmosphere that facilitates removal of the binder at a low temperature and that controls the valence of the dopant atoms;
heating the at least one wedge at a temperature appropriate to remove the binder and the dispersant;
heating the at least one wedge to a high enough temperature to sinter the particles together into a solid structure having low porosity; and
cooling the solid structure.
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32. The method of claim 19 wherein the step of forming comprises:
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forming a solid structure; and
machining the solid structure to achieve a required size and shape within a required tolerance.
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33. The method of claim 19 wherein the step of forming comprises:
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forming a solid structure; and
treating the solid structure by ion implantation, vapor deposition, chemical vapor deposition, physical deposition, electro-plating deposition, or neutron bombardment to produce a surface layer.
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34. The method of claim 33 wherein the step of forming further comprises:
producing the desired layer properties within said surface layer by heating the solid structure in a controlled atmosphere to induce diffusion, recrystalization, dopant activation, or valence changes of metallic ions.
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35. The method of claim 19 wherein the step of forming comprises:
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mixing fine particles of a composition appropriate for forming said dissipative material with binders and sintering aids into a mixture;
choosing a hot pressing atmosphere to control a valence of dopant atoms;
pressing the mixture in a mold at a temperature high enough to cause consolidation and binding of the particles into a solid structure having low porosity; and
cooling and removing the solid structure from the mold.
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36. The method of claim 19 wherein the step of forming comprises:
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melting metals of a composition appropriate for forming said dissipative material in a non-reactive crucible;
casting the melted metals into an ingot;
rolling the ingot into a rolled ingot;
extruding the rolled ingot into an extruded material;
drawing the extruded material into a drawn material;
pressing the drawn material in a pressed material; and
heating the pressed material.
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30. A method of manufacturing a dissipative bonding tip comprising:
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forming a dissipative material having at least a doped semiconductor that is titanium nitride carbide, as a bonding tip that has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough to avoid current flow large enough to damage said device being bonded, wherein said step of forming includes forming said doped semiconductor on a conducting core of cobalt bonded tungsten carbide.
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37. A method of using a bonding tip, comprising:
bonding a device using a bonding tip made with a dissipative material that has a resistance low enough to prevent a discharge of charge to said device and high enough to avoid current flow large enough to damage said device. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44)
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45. A method of using a bonding tip, comprising:
bonding a device using a bonding tip made with a dissipative material that is a doped semiconductor of titanium nitride carbide and has a resistance low enough to prevent a discharge of charge to said device and high enough to avoid current flow large enough to damage said device, wherein said dissipative material is formed on a conducting core of cobalt bonded tungsten carbide.
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46. A device comprising:
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a bonding tip having a dissipative material that is positioned to come in contact with a device being bonded during bonding, in which a current is allowed to flow that is produced by static charge generated during bonding, and that has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough so that the current flow is not large enough to damage said device being bonded. - View Dependent Claims (47, 49, 51)
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48. A method of manufacturing a dissipative bonding tip comprising:
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forming a bonding tip having a dissipative material that is positioned to come in contact with a device being bonded during bonding, in which a current is allowed to flow that is produced by static charge generated during bonding, and that has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough so that the current flow is not large enough to damage said device being bonded.
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50. A method of bonding using a dissipative bonding tip comprising:
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providing a bonding tip having a dissipative material that has a resistance low enough to prevent a discharge of charge to a device being bonded and high enough so that the current flow is not large enough to damage a device being bonded, positioning the bonding tip so that the dissipative material electrically couples with the device being bonded during bonding, forming a bond on the device being bonded, and allowing a current flow that is produced by static charge generated by the bonding.
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Specification
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Litigation Data
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Current AssigneeAnza Technology, Inc.
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Original AssigneeSJM Technologies
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InventorsReiber, Mary Louise, Reiber, Steven Frederick
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Primary Examiner(s)Dunn, Tom
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Assistant Examiner(s)EDMONDSON, LYNNE RENEE
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Application NumberUS09/514,454Time in Patent Office746 DaysField of Search228/4.5, 228/180.5, 228/6.1, 228/6.2, 219/56.21US Class Current228/4.5CPC Class CodesB23K 20/005 Capillary weldingB23K 20/025 Bonding tips thereforH01L 2224/45144 Gold (Au) as principal cons...H01L 2224/48 of an individual wire conne...H01L 2224/78301 CapillaryH01L 2224/78302 ShapeH01L 2224/85205 Ultrasonic bondingH01L 24/45 of an individual wire conne...H01L 24/78 Apparatus for connecting wi...H01L 24/85 using a wire connector wire...H01L 2924/00 Indexing scheme for arrange...H01L 2924/00014 the subject-matter covered ...H01L 2924/00015 the subject-matter covered ...H01L 2924/01005 Boron [B]H01L 2924/01006 Carbon [C]H01L 2924/01011 Sodium [Na]H01L 2924/01013 Aluminum [Al]H01L 2924/01014 Silicon [Si]H01L 2924/01027 Cobalt [Co]H01L 2924/01039 Yttrium [Y]View All
