Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material composite structure using electric connection structure
DCFirst Claim
1. An electric connecting structure for connecting a first body of semiconductor material overlaid by a second body of semiconductor material, the connecting structure comprising:
- a plug region extending through a portion of said second body and made of monocrystalline semiconductor material;
an insulation region surrounding laterally said plug region; and
a first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body.
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Abstract
An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
60 Citations
26 Claims
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1. An electric connecting structure for connecting a first body of semiconductor material overlaid by a second body of semiconductor material, the connecting structure comprising:
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a plug region extending through a portion of said second body and made of monocrystalline semiconductor material;
an insulation region surrounding laterally said plug region; and
a first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
further comprising a contact region of electrically conducting material in contact with said second face of said plug region.
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3. The electric connection structure of claim 2, further comprising an electric connection line extending above said second body and having a first end forming said contact region.
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4. The electric connection structure of claim 3, wherein said electric connection line has a second end in electrical contact with a conductive region of said second body.
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5. The electric connection structure of claim 3, wherein said electric connection line has a second end in electrical contact with a contact region formed on a third body fixed to said second body.
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6. The electric connection structure of claim 2, for electrically connecting said second body to a third body of semiconductor material arranged on said second body, wherein said contact region further comprises at least one second electromechanical connection region made of a material resulting from the chemical reaction of said semiconductor material with a metal, said second electromechanical connection regions being arranged between said second body and said third body.
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7. The electric connection structure according to claim 1, wherein said insulation region comprises a trench having a closed shape filled at least partially with insulating material.
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8. The electric connection structure according to claim 1, wherein said first electromechanical connection region is made of a material resulting from the chemical reaction of said semiconductor material with a metal.
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9. The electric connection structure according to claim 1, wherein said first electromechanical connection region is made of a metal resulting from the chemical reaction of silicon with a metal chosen from among a group comprising gold, palladium, titanium, and nickel.
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10. The electric connection structure of claim 1 wherein said plug region and said second body are made of the same material.
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11. An electric connecting structure for connecting a first body of semiconductor material overlaid by a second body of semiconductor material comprising a substrate region and an epitaxial region arranged on each other and partially insulated from one another by insulating regions, the connecting structure comprising:
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a plug region extending through a portion of said second body and made of semiconductor material;
an insulation region surrounding laterally said plug region; and
a first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body, wherein;
said plug region further comprises a first plug portion extending throughout the thickness of said substrate region, and a second plug portion formed inside said epitaxial region, said second plug portion being aligned and in direct electrical contact with said first plug portion;
said insulation region further comprises a first insulation portion laterally surrounding said first plug portion, and a second insulation portion laterally surrounding said second plug portion;
a contact region of electrically conducting material extends on a free face of said substrate region in electrical contact with said first plug portion; and
said second plug portion faces and is in direct electrical contact with said first electromechanical connection region. - View Dependent Claims (12, 13)
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14. An electric connecting structure for connecting a first body of semiconductor material overlaid by a second body of semiconductor material comprising a substrate region and an epitaxial region arranged on one another and reciprocally insulated by insulating regions, the connection structure comprising:
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a plug region extending through a portion of said second body and made of semiconductor material;
an insulation region surrounding laterally said plug region; and
a first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body, wherein said substrate region has a smaller area than said epitaxial region, said plug region extends throughout the thickness of said epitaxial region, and has a first face and a second face, said first face being in contact with said first electromechanical connection region, and said second face being in direct contact with at least one electric connection region of electrically conducting material. - View Dependent Claims (15, 16)
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17. A composite structure comprising:
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a first body of semiconductor material;
a second body of semiconductor material arranged on said first body); and
an electric connection structure, including;
a plug region extending through a portion of said second body and made of monocrystalline semiconductor material, an insulation region laterally surrounding said plug region, and a first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
wherein said plug region extends throughout the thickness of said second body and has a first face and a second face, said first face being in contact with said first electromechanical connection region; further comprising a contact region of electrically conducting material, in contact with said second face of said plug region; and
wherein said first body houses an electronic circuit); and
said second body houses a micro-electromechanical device comprising a fixed part and a mobile part separated from each other by at least one delimitation trench extending through said second body.
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19. The composite structure of claim 18, further comprising an external electric connection wire bonded to said contact region.
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20. The composite structure of claim 18, wherein said electric connection structure further comprises an electric connection line extending above said second body and having a first end forming said contact region, and a second end in electrical contact with said micro-electromechanical device.
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21. The composite structure of claim 18, further comprising a third body fixed to said second body, said electric connection structure further comprising an electric connection line having a first end forming said contact region and a second end in electrical contact with a contact region formed on said third body.
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22. The composite structure of claim 21, wherein said third body is a slider, and said composite structure forms an actuator unit for micrometric position regulation of a hard-disk driver.
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23. The composite structure of claim 17, wherein the first body of semiconductor material further houses a first electronic circuit;
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further comprising a third body of semiconductor material and housing a second electronic circuit, said third body fixed to said second body; and
the electric connection structure, wherein;
said plug region includes a first face and a second face, said plug region connecting together said first and second electronic circuits, said first electromechanical connection region arranged between said first body and said second body is further in electrical contact with said first face of said plug region, and further comprising a contact region of electrically conducting material in contact with said second face of said plug region, the contact region having at least one second electromechanical connection region made of a material resulting from the chemical reaction of said semiconductor material with a metal, said second electromechanical connection regions being arranged between said second body and said third body.
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24. The composite structure of claim 23, further comprising a sealing region having a closed shape and arranged between said first and said second bodies, outside one of said first and second electronic circuits.
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25. A composite structure comprising:
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a first body of semiconductor material;
a second body of semiconductor material arranged on said first body and comprising a an epitaxial region housing a micro-electromechanical device having a fixed part and a mobile part separated from one another by a delimitation trench extending through said epitaxial region and a substrate region forming a cap region and arranged over the mobile part of said epitaxial region, said epitaxial region and said substrate region being arranged on each other and partially insulated from one another by first and second insulating regions; and
an electric connection structure, including;
a first plug portion formed of semiconductor material and extending throughout the thickness of said substrate region, a second plug portion formed of semiconductor material and formed inside said epitaxial region, said second plug portion being aligned and in direct electrical contact with said first plug portion and further facing and in direct electrical contact with a first electromechanical connection region, said first electromechanical connection region being formed of electrically conductive material arranged between said first body and said second body and in electrical contact with conductive regions of said first body, said first insulation portion laterally surrounding said first plug portion, and said second insulation portion laterally surrounding said second plug portion; and
a contact region of electrically conducting material extending on a free face of said substrate region in electrical contact with said first plug portion.
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26. A composite structure comprising:
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a first body of semiconductor material;
a second body of semiconductor material arranged on said first body and comprising an epitaxial region housing a micro-electromechanical device comprising a fixed part and a mobile part separated from one another by at least one delimitation trench extending through said epitaxial region and a substrate region forming a cap region which has larger dimensions than said mobile part and is fixed to said fixed part, said epitaxial region and said substrate region overlaid to each other and reciprocally insulated from one another by insulating regions; and
an electric connection structure, including;
a plug region extending throughout the thickness of said epitaxial region of said second body and made of semiconductor material, said plug region having a first face and a second face, said first face being in contact with a first electromechanical connection region, and said second face being in direct contact with at least one electric connection region of electrically conducting material, said first electromechanical connection region of electrically conductive material arranged between said first body and said second body and in electrical contact with said plug region and with conductive regions of said first body, and an insulation region laterally surrounding said plug region.
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Specification