Multi-layered wiring layer and method of fabricating the same
DC CAFC
First Claim
1. A barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate, comprising a multi-layered structure of first and second films,said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
2 Assignments
Litigations
6 Petitions
Accused Products
Abstract
There is provided a barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate. The barrier film has a multi-layered structure of first and second films wherein the first film is composed of crystalline metal containing nitrogen therein, and the second film is composed of amorphous metal nitride. The barrier film is constituted of common metal atomic species. The barrier film prevents copper diffusion from a copper wiring layer into a semiconductor device, and has sufficient adhesion characteristic to both a copper film and an interlayer insulating film.
63 Citations
10 Claims
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1. A barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate, comprising a multi-layered structure of first and second films,
said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
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5. A multi-layered wiring structure comprising a barrier film which prevents diffusion of copper from a copper wiring layer formed on a semiconductor substrate,
said barrier film having a multi-layered structure of first and second films, said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
Specification
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- Resources
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneeNEC Corporation
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InventorsTagami, Masayoshi, Hayashi, Yoshihiro
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Primary Examiner(s)Thomas, Tom
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Assistant Examiner(s)VU, HUNG K
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Application NumberUS09/596,415Time in Patent Office1,009 DaysField of Search257/751, 257/752, 257/753, 257/758, 257/762, 257/773, 438/626, 438/627, 438/628, 438/643, 438/644, 438/645US Class Current257/751CPC Class CodesH01L 21/2855 by physical means, e.g. spu...H01L 21/76846 Layer combinationsH01L 21/76862 Bombardment with particles,...H01L 21/76865 Selective removal of parts ...H01L 23/5226 Via connections in a multil...H01L 23/53238 Additional layers associate...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01L 2924/3011 Impedance
