Multi-layered wiring layer and method of fabricating the same
DC CAFC- US 6,538,324 B1
- Filed: 06/19/2000
- Issued: 03/25/2003
- Est. Priority Date: 06/24/1999
- Status: Expired due to Term
First Claim
1. A barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate, comprising a multi-layered structure of first and second films,said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
2 Assignments
Litigations
6 Petitions
Accused Products
Abstract
There is provided a barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate. The barrier film has a multi-layered structure of first and second films wherein the first film is composed of crystalline metal containing nitrogen therein, and the second film is composed of amorphous metal nitride. The barrier film is constituted of common metal atomic species. The barrier film prevents copper diffusion from a copper wiring layer into a semiconductor device, and has sufficient adhesion characteristic to both a copper film and an interlayer insulating film.
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Citations
10 Claims
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1. A barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate, comprising a multi-layered structure of first and second films,
said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
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5. A multi-layered wiring structure comprising a barrier film which prevents diffusion of copper from a copper wiring layer formed on a semiconductor substrate,
said barrier film having a multi-layered structure of first and second films, said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.
Specification