LIGHT FOR USE IN ACTIVATING LIGHT-ACTIVATED MATERIALS, THE LIGHT HAVING A PLURALITY OF LIGHT EMITTING SEMICONDUCTOR CHIPS EMITTING LIGHT OF DIFFERING PEAK WAVELENGTHS TO PROVIDE A WIDE LIGHT SPECTRUM PROFILE
First Claim
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1. A light for activating a light-activated material comprising:
- a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, a plurality of light emitting semiconductor chips being mounted to said heat sink, at least some of said light emitting semiconductor chips being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting semiconductor chips being a positive integer “
n”
where n is greater than or equal to 2, each of said light emitting semiconductor chips emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n, a first of said light emitting semiconductor chips having the lowest peak wavelength light emission of said plurality of light emitting semiconductor chips, said lowest peak wavelength light emission being referred to as “
λ
1”
, a last of said light emitting semiconductor chips having the highest peak wavelength light emission of said plurality of light emitting semiconductor chips, said highest peak wavelength light emission being referred to as “
λ
n”
, the wavelength of λ
1 being less than λ
n, each of said light emitting semiconductor chips peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n, λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting semiconductor chips, said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n, each of said light emitting semiconductor chips emitting light of an intensity Ii, where “
i”
is an integer between 1 and n, a first of said light emitting semiconductor chips having the lowest intensity of light emission of said plurality of light emitting semiconductor chips, said lowest intensity light emission being referred to as “
I1”
, a last of said light emitting semiconductor chips having the highest intensity of light emission of said plurality of light emitting semiconductor chips, said highest intensity light emission being referred to as “
In”
, the intensity of I1 being less than the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than I1 and where Ii is less than In;
wherein the intensity of Ii of at least some of said plurality of light emitting semiconductor chips is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i, and having a gross well in said heat sink, a plurality of secondary well in said gross well of said heat sink, at least some of said light emitting semiconductor chips being located in said secondary wells of said heat sink.
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Abstract
Light system useful for activating light-activated materials are disclosed. Various configurations of light emitting semiconductor chips and heat sinks are disclosed, as well as various structures and methods for driving, controlling and using them, and materials and structures usable therewith.
72 Citations
21 Claims
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1. A light for activating a light-activated material comprising:
-
a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, a plurality of light emitting semiconductor chips being mounted to said heat sink, at least some of said light emitting semiconductor chips being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting semiconductor chips being a positive integer “
n”
where n is greater than or equal to 2,each of said light emitting semiconductor chips emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest peak wavelength light emission of said plurality of light emitting semiconductor chips, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting semiconductor chips having the highest peak wavelength light emission of said plurality of light emitting semiconductor chips, said highest peak wavelength light emission being referred to as “
λ
n”
,the wavelength of λ
1 being less than λ
n,each of said light emitting semiconductor chips peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting semiconductor chips,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting semiconductor chips emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest intensity of light emission of said plurality of light emitting semiconductor chips, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting semiconductor chips having the highest intensity of light emission of said plurality of light emitting semiconductor chips, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than I1 and where Ii is less than In;
wherein the intensity of Ii of at least some of said plurality of light emitting semiconductor chips is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i, andhaving a gross well in said heat sink, a plurality of secondary well in said gross well of said heat sink, at least some of said light emitting semiconductor chips being located in said secondary wells of said heat sink. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A light for activating a light-activated material comprising:
-
a light module capable of emitting light useful in activating a light-activated material, an elongate heat sink in said light module, said elongate heat sink having a longitudinal axis, said heat sink having heat conductance qualities, a plurality of light emitting semiconductor chips being mounted to said heat sink, at least one cover, said cover serving to protect at least one of said light emitting semiconductor chips from damage, at least some of said light emitting semiconductor chips being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting semiconductor chips being a positive integer “
n”
, where n is greater than or equal to 2,each of said light emitting semiconductor chips emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest peak wavelength light emission of said plurality of light emitting semiconductor chips, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting semiconductor chips having the highest peak wavelength light emission of said plurality of light emitting semiconductor chips, said highest peak wavelength light emission being referred to as “
λ
n”
,the wavelength of λ
1 being less than λ
n,each of said light emitting semiconductor chips peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting semiconductor chips,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting semiconductor chips emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest intensity of light emission of said plurality of light emitting semiconductor chips, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting semiconductor chips having the highest intensity of light emission of said plurality of light emitting semiconductor chips, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than I1 and where Ii is less than In;
wherein the intensity of Ii of at least some of said plurality of light emitting semiconductor chips is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i;
wherein λ
1 is greater than or equal to 200 nm and λ
n is less than or equal to 455 nm;
wherein at least some of said light emitting semiconductor chips are selected from the group consisting of light emitting diode chips, laser chips, light emitting diode chip arrays, diode laser chips, diode laser chip arrays, surface emitting laser chips, edge emitting laser chips, and VCSEL chips; and
wherein at least some of the light directly emitted by said light emitting semiconductor chips is emitted forward from said light emitting semiconductor chips at an angular orientation with respect to said elongate heat sink longitudinal axis that is in the range of from about 30 to about 150 degrees.
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21. A light for activating a light-activated material comprising:
-
a light module capable of emitting light useful in activating a light-activated material, an elongate heat sink in said light module, said elongate heat sink having a longitudinal axis;
said heat sink having heat conductance qualities, a plurality of light emitting semiconductor chips being mounted directly or indirectly to said heat sink, at least some of said light emitting semiconductor chips being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting semiconductor chips being a positive integer “
n”
, where n is greater than or equal to 2,each of said light emitting semiconductor chips emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest peak wavelength light emission of said plurality of light emitting semiconductor chips, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting semiconductor chips having the highest peak wavelength light emission of said plurality of light emitting semiconductor chips, said highest peak wavelength light emission being referred to as “
λ
n”
,said light emitting semiconductor chips being selected so that the wavelength of λ
1 is measurably less than λ
n,each of said light emitting semiconductor chips peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting semiconductor chips,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting semiconductor chips emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting semiconductor chips having the lowest intensity of light emission of said plurality of light emitting semiconductor chips, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting semiconductor chips having the highest intensity of light emission of said plurality of light emitting semiconductor chips, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than I1 and where Ii is less than to In;
wherein the intensity of Ii of at least some of said plurality of light emitting semiconductor chips is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i; and
wherein at least some of the light directly emitted by said light emitting semiconductor chips is emitted forward from said light emitting semiconductor chips at an angular orientation with respect to said elongate heat sink longitudinal axis that is in the range of from about 30 to about 150 degrees.
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Specification
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Current AssigneeCAO Group, Inc.
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Original AssigneeCAO Group, Inc.
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InventorsCao, Densen
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Primary Examiner(s)Lewis, Ralph A.
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Application NumberUS10/189,255Publication NumberTime in Patent Office1,203 DaysField of Search433/29, 433/215, 606/1, 606/13, 606/16, 607/88, 362/119, 362/800, 362/804US Class Current433/29CPC Class CodesA61C 19/004 Hand-held apparatus, e.g. gunsA61N 2005/0652 Arrays of diodesB23K 26/0096 Portable laser equipment, e...B23K 26/0608 in the same heat affected z...B23K 26/064 by means of optical element...B23K 26/0643 comprising mirrorsB23K 26/0648 comprising lensesB23K 26/0665 by beam condensation on the...B23K 26/703 Cooling arrangements by usi...Y10S 362/80 Light emitting diode
