Semiconductor device, manufacturing method and apparatus for the same
DC- US 6,969,915 B2
- Filed: 01/14/2002
- Issued: 11/29/2005
- Est. Priority Date: 01/15/2001
- Status: Expired due to Term
First Claim
Patent Images
1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
- an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer.
2 Assignments
Litigations
1 Petition
Accused Products
Abstract
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
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Citations
69 Claims
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1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an alloy layer composed of a combination of an intermetallic compound of a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, and an intermetallic compound of the first metal included in the under-bump layer and the metal that is the main component of the alloy solder, wherein the alloy layer is formed between the solder bump and the adjoining under-bump layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
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an intermetallic compound formed between the solder bump and the adjoining under-bump layer, wherein the intermetallic compound includes;
a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump; and
a metal that is the main component of the alloy solder. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
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an alloy layer formed between the solder bump and the adjoining under-bump layer, wherein the alloy layer is composed of a combination of;
an intermetallic compound composed of a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump, and a metal that is the main component of the alloy solder; and
an intermetallic compound of the first metal included in the adjoining under-bump layer and the metal that is the main component of the alloy solder. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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61. An electrode structure comprising:
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an under-bump layer;
a solder bump comprising an alloy solder; and
an intermetallic compound, including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, formed between the adjoining under-bump layer and the solder bump.
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62. A semiconductor device comprising:
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a wiring layer;
an under-bump layer formed above the wiring layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises;
the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer. - View Dependent Claims (63, 64, 65)
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66. An electrode structure comprising:
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an under-bump layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises;
at least the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer. - View Dependent Claims (67, 68, 69)
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Specification
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Litigation Data
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneeNEC Corporation
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InventorsNishiyama, Tomohiro, Tago, Masamoto, Mikagi, Kaoru, Tao, Tetuya
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Primary Examiner(s)Parekh, Nitin
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Application NumberUS10/043,225
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Publication Number
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Time in Patent Office1,415 Days
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Field of Search257/781, 257/750, 257/766, 257/767, 257/762, 257/772, 257/748, 257/737, 257/736, 257/753, 257/780, 257/738, 257/779, 148/675
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US Class Current257/781
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CPC Class CodesB23K 2101/40 Semiconductor devicesB23K 3/0623 for shaped solder piece fee...H01L 2224/0401 Bonding areas specifically ...H01L 2224/05022 the internal layer being at...H01L 2224/05027 the internal layer extendin...H01L 2224/05552 in top viewH01L 2224/05572 the external layer extendin...H01L 2224/11334 using preformed bumpsH01L 2224/11849 ReflowingH01L 2224/119 Methods of manufacturing bu...H01L 2224/13099 MaterialH01L 2224/13111 Tin [Sn] as principal const...H01L 2224/16225 the item being non-metallic...H01L 2224/32225 the item being non-metallic...H01L 2224/73204 the bump connector being em...H01L 24/05 of an individual bonding areaH01L 24/11 Manufacturing methods for b...H01L 24/13 of an individual bump conne...H01L 24/742 Apparatus for manufacturing...H01L 2924/00 Indexing scheme for arrange...View All
