Semiconductor device, manufacturing method and apparatus for the same
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First Claim
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1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
- an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer.
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Litigations
1 Petition
Accused Products
Abstract
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
30 Citations
69 Claims
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1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
an alloy layer composed of a combination of an intermetallic compound of a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, and an intermetallic compound of the first metal included in the under-bump layer and the metal that is the main component of the alloy solder, wherein the alloy layer is formed between the solder bump and the adjoining under-bump layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
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an intermetallic compound formed between the solder bump and the adjoining under-bump layer, wherein the intermetallic compound includes;
a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump; and
a metal that is the main component of the alloy solder. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:
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an alloy layer formed between the solder bump and the adjoining under-bump layer, wherein the alloy layer is composed of a combination of;
an intermetallic compound composed of a second metal constituting a metal layer that is temporarily arranged on the under-bump layer, said second metal also being different from a metal in the adjoining under-bump layer, and is then dissolved into the alloy solder on formation of the solder bump, and a metal that is the main component of the alloy solder; and
an intermetallic compound of the first metal included in the adjoining under-bump layer and the metal that is the main component of the alloy solder. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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61. An electrode structure comprising:
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an under-bump layer;
a solder bump comprising an alloy solder; and
an intermetallic compound, including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, formed between the adjoining under-bump layer and the solder bump.
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62. A semiconductor device comprising:
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a wiring layer;
an under-bump layer formed above the wiring layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises;
the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer. - View Dependent Claims (63, 64, 65)
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66. An electrode structure comprising:
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an under-bump layer;
a solder bump comprising an alloy solder; and
an alloy layer provided between the solder bump and the adjoining under-bump layer, wherein the alloy layer comprises;
at least the main component of the alloy solder; and
a metal which is different from the main component of the alloy solder and is also different from a metal included in the adjoining under-bump layer. - View Dependent Claims (67, 68, 69)
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Specification
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Litigation Data
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneeNEC Corporation
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InventorsNishiyama, Tomohiro, Tago, Masamoto, Mikagi, Kaoru, Tao, Tetuya
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Primary Examiner(s)Parekh, Nitin
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Application NumberUS10/043,225Publication NumberTime in Patent Office1,415 DaysField of Search257/781, 257/750, 257/766, 257/767, 257/762, 257/772, 257/748, 257/737, 257/736, 257/753, 257/780, 257/738, 257/779, 148/675US Class Current257/781CPC Class CodesB23K 2101/40 Semiconductor devicesB23K 3/0623 for shaped solder piece fee...H01L 2224/0401 Bonding areas specifically ...H01L 2224/05022 the internal layer being at...H01L 2224/05027 the internal layer extendin...H01L 2224/05552 in top viewH01L 2224/05572 the external layer extendin...H01L 2224/11334 using preformed bumpsH01L 2224/11849 ReflowingH01L 2224/119 Methods of manufacturing bu...H01L 2224/13099 MaterialH01L 2224/13111 Tin [Sn] as principal const...H01L 2224/16225 the item being non-metallic...H01L 2224/32225 the item being non-metallic...H01L 2224/73204 the bump connector being em...H01L 24/05 of an individual bonding areaH01L 24/11 Manufacturing methods for b...H01L 24/13 of an individual bump conne...H01L 24/742 Apparatus for manufacturing...H01L 2924/00 Indexing scheme for arrange...View All
