×

Image sensor and method for fabricating the same

DC
  • US 6,979,587 B2
  • Filed: 12/30/2002
  • Issued: 12/27/2005
  • Est. Priority Date: 01/10/2002
  • Status: Expired due to Term
First Claim
Patent Images

1. An image sensor, comprising:

  • a semiconductor substrate;

    an active area including a photodiode area formed in a predetermined position of the substrate, a floating diffusion area having a smaller area than the photodiode area and a channel area having a bottle-neck structure connecting to the photodiode area and the floating diffusion area;

    a field area for isolating electrically the active area;

    a field stop layer being formed beneath the field area and being wider than the field area in a direction towards the active area; and

    a gate electrode formed on the substrate by covering the channel area and a portion of the photodiode contacted to the channel area.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×