Semiconductor device
DC
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate in which a semiconductor element is formed;
multilayer wiring layers that are provided on the semiconductor substrate, for forming a structure connected with the semiconductor element;
a spiral inductor that is formed of at least one layer of the multilayer wiring layers;
a connection terminal that is formed of an uppermost layer of the multilayer wiring layers; and
a shielding wiring pattern that is formed of the uppermost layer of the multilayer wiring layers and is disposed between the spiral inductor and the connection terminal to shield the spiral inductor from an electrical field change caused by an electrical potential change due to input and output signals that pass through the connection terminal.
2 Assignments
Litigations
0 Petitions
Accused Products
Abstract
A semiconductor device includes: a semiconductor substrate in which a semiconductor element is formed; a multilayer structured wiring layer that is provided on the semiconductor substrate, the wiring layer forming a structure connected with the semiconductor element; a spiral inductor that is formed in at least one layer of the wiring layer; and a connection terminal formed in an uppermost layer of the wiring layer for establishing connection from the wiring layer to an outside such as a printed board. A shielding wiring pattern is disposed between the spiral inductor and the connection terminal, the shielding wiring pattern functioning as an electromagnetic shield for the uppermost layer of the wiring layer. The shielding wiring pattern absorbs a change in electrical field caused by a potential change in the connection terminal, providing a shielding structure which suppresses the superposing of noise and an unnecessary signal onto the spiral inductor from the connection terminal.
3 Citations
7 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate in which a semiconductor element is formed; multilayer wiring layers that are provided on the semiconductor substrate, for forming a structure connected with the semiconductor element; a spiral inductor that is formed of at least one layer of the multilayer wiring layers; a connection terminal that is formed of an uppermost layer of the multilayer wiring layers; and a shielding wiring pattern that is formed of the uppermost layer of the multilayer wiring layers and is disposed between the spiral inductor and the connection terminal to shield the spiral inductor from an electrical field change caused by an electrical potential change due to input and output signals that pass through the connection terminal. - View Dependent Claims (2, 3)
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4. A semiconductor device, comprising:
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a semiconductor substrate in which a semiconductor element is formed; multilayer wiring layers that are provided on the semiconductor substrate, for forming a structure connected with the semiconductor element; first and second spiral inductors that are formed of at least one layer of the multilayer wiring layers and arranged to be symmetric in planar disposition with respect to a predetermined center line; a first connection terminal that is formed of an uppermost layer of the multilayer wiring layers and placed in the vicinity of the first spiral inductor; a second connection terminal that is formed of the uppermost layer and placed in the vicinity of the second spiral inductor; and first and second shielding wiring patterns that are formed of the uppermost layer and arranged to be symmetric in planar disposition with respect to the predetermined center line, the first shielding wiring pattern being disposed between the first spiral inductor and the first connection terminal, and the second shielding wiring pattern being disposed between the second spiral inductor and the second connection terminal; wherein the first and second shielding wiring patterns shield respectively the first and second spiral inductors from electrical field changes caused by electrical potential changes due to input and output signals that pass through the first and second connection terminals. - View Dependent Claims (5, 6, 7)
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Specification
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- Resources
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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InventorsIshida, Kaoru, Fukui, Tsukasa
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Primary Examiner(s)QUACH, TUAN N
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Application NumberUS10/928,503Publication NumberTime in Patent Office641 DaysField of Search257/531, 257/659, 257/758US Class Current257/531CPC Class CodesH01L 23/5225 Shielding layers formed tog...H01L 23/5227 Inductive arrangements or e...H01L 27/08 including only semiconducto...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01L 2924/3011 ImpedanceH01Q 1/38 formed by a conductive laye...
