Elongated bonding pad for wire bonding and sort probing
DC
First Claim
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1. A integrated circuit device, comprising:
- a semiconductor substrate having an upper surface, electrical components being formed in the semiconductor substrate;
a plurality of metal layers on top of the upper surface of the substrate, conductive paths defined in the metal layers being connected to the electrical components; and
a plurality of bonding pads disposed on top of the metal layers and connected thereto such that the electrical components are connected to selected bonding pads through the conductive paths, each bonding pad further comprising;
a bonding area located above a region where each of the metal layers overlaps; and
an elongated probing area located above a subset of the plurality of metal layers for receiving a probing pin of a probing card, the elongated probing area being electrically connected to the bonding area.
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Abstract
An elongated bonding pad comprises two areas, a bonding area and an elongated probing area. The bonding area is located on the edge of an integrated circuit device for wire bonding. The elongated probing area is located on the inner area of the device. The long dimension of the elongated probing area is large enough for carrying a probing mark and the short dimension of the probing area is electrically and mechanically connected to the bonding area. Such elongated bonding pad can reduce the possibility of bonding wire open failures caused by wafer sort probing and increase the device'"'"'s capacity of hosting more electrical components.
12 Citations
10 Claims
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1. A integrated circuit device, comprising:
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a semiconductor substrate having an upper surface, electrical components being formed in the semiconductor substrate; a plurality of metal layers on top of the upper surface of the substrate, conductive paths defined in the metal layers being connected to the electrical components; and a plurality of bonding pads disposed on top of the metal layers and connected thereto such that the electrical components are connected to selected bonding pads through the conductive paths, each bonding pad further comprising; a bonding area located above a region where each of the metal layers overlaps; and an elongated probing area located above a subset of the plurality of metal layers for receiving a probing pin of a probing card, the elongated probing area being electrically connected to the bonding area. - View Dependent Claims (2, 3, 4, 5)
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6. A integrated circuit device, comprising:
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a semiconductor substrate having an upper surface, the substrate further comprising an inner area and an outer area, the inner area hosting a plurality of electrical components connected through a plurality of metal layers disposed on the upper surface of the substrate; and a plurality of bonding pads disposed on the conductive paths and connected thereto, each bonding pad further comprising; a bonding area connected to at least of one of the metal layers and located on top of the outer area of the substrate for receiving a bonding wire; and an elongated probing area connected to the bonding area and located on top of the inner area of the substrate for receiving a probing pin of a probing card; wherein the bonding area is located above a region where all the metal layers overlap and the probing area is located above a region where less than all the metal layers overlap. - View Dependent Claims (7, 8, 9, 10)
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Specification
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Litigation Data
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Current AssigneeAltera Corporation (Intel Corporation)
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Original AssigneeAltera Corporation (Intel Corporation)
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InventorsLong, Jon M., Foerstel, Joseph W.
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Primary Examiner(s)LOUIE, WAI SING
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Application NumberUS10/699,118Time in Patent Office1,019 DaysField of Search257/780, 257/785, 257/786US Class Current257/758CPC Class CodesH01L 2224/02166 Collar structuresH01L 2224/023 Redistribution layers [RDL]...H01L 2224/04042 Bonding areas specifically ...H01L 2224/05093 of a plurality of viasH01L 2224/05095 at the periphery of the int...H01L 2224/05552 in top viewH01L 2224/05554 being squareH01L 2224/05624 Aluminium [Al] as principal...H01L 2224/05644 Gold [Au] as principal cons...H01L 2224/05647 Copper [Cu] as principal co...H01L 2224/05684 Tungsten [W] as principal c...H01L 2224/45124 Aluminium (Al) as principal...H01L 2224/45144 Gold (Au) as principal cons...H01L 2224/48624 Aluminium (Al) as principal...H01L 2224/48644 Gold (Au) as principal cons...H01L 2224/48647 Copper (Cu) as principal co...H01L 2224/48684 Tungsten (W) as principal c...H01L 2224/48724 Aluminium (Al) as principal...H01L 2224/48744 Gold (Au) as principal cons...H01L 2224/48747 Copper (Cu) as principal co...View All
