situ finishing aid control
DC CAFC
First Claim
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1. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
- providing the tracked semiconductor wafer having tracked information;
providing a finishing surface;
providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface;
providing a finishing control subsystem having;
at least three operative process sensors for sensing in situ process information during the finishing cycle time;
access to the tracked information; and
a processor to evaluate the in situ process information and the tracked information;
applying an operative finishing motion in the interface forming at least one region having the finishing aid and wherein the at least one region has a tangential force of friction; and
changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information and wherein changing the control parameters changes the tangential force of friction in the at least one region having the finishing aid during at least a portion of the finishing cycle time.
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Abstract
A method of using finishing aids for advanced finishing control is described. A finishing surface is used generally to induce frictional wear. The finishing aids with preferred in situ control can improve control of the coefficient of friction, the tangential force of friction, a finishing rate, a regional finishing rate(s), a differential finishing rate, and help reduce unwanted defects. A finishing aid can reduce friction. A lubricant is an illustrative finishing aid. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential finishing rate methods are described to differentially finish semiconductor wafers. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.
97 Citations
139 Claims
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1. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
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providing the tracked semiconductor wafer having tracked information; providing a finishing surface; providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface; providing a finishing control subsystem having; at least three operative process sensors for sensing in situ process information during the finishing cycle time; access to the tracked information; and a processor to evaluate the in situ process information and the tracked information; applying an operative finishing motion in the interface forming at least one region having the finishing aid and wherein the at least one region has a tangential force of friction; and changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information and wherein changing the control parameters changes the tangential force of friction in the at least one region having the finishing aid during at least a portion of the finishing cycle time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
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providing the tracked semiconductor wafer having tracked information; providing a finishing surface; providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface; providing a finishing control subsystem having; at least three operative process sensors for sensing in situ process information during the finishing cycle time; access to the tracked information; and a processor to evaluate the in situ process information and the tracked information; applying an operative finishing motion in the interface formed between the finishing surface and the semiconductor wafer surface forming at least one region having the finishing aid which reacts with the semiconductor wafer surface and wherein the at least one region has a tangential force of friction; and changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information and wherein changing the control parameters changes the tangential force of friction in the at least one region having the finishing aid which reacts with the semiconductor wafer surface during at least a portion of the finishing cycle time. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A method for finishing a semiconductor wafer having tracked information, the method comprising:
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a step (A) providing a semiconductor wafer having a heterogeneous semiconductor wafer surface comprising at least a first uniform region and a second uniform region; a step (B) providing a finishing surface; a step (C) providing a finishing aid proximate the semiconductor wafer; a step (D) providing at least one finishing control subsystem having at least three operative process sensors, at least one processor, and a controller and wherein the at least one processor for processing; (i) the tracked information, and (ii) historical performance including a quantity of historical performance of prior semiconductor wafers; a step (E) applying an operative finishing motion to an interface between the heterogeneous semiconductor wafer surface and the finishing surface and wherein the interface includes at least one uniform region having the finishing aid; a step (F) sensing an in situ finishing information with the at least three operative process sensors during a finishing cycle time; a step (G) evaluating a multiplicity of finishing information, and each having varying effects on the finishing with the finishing aid; a step (H) determining a change for at least two process control parameters using; (i) the tracked information, (ii) the historical performance including the quantity of historical performance of prior semiconductor wafers, (iii) the in situ finishing information, and (iv) the step (G) of evaluating the multiplicity of finishing information; and a step (I) changing the at least two control parameters changes the tangential force of friction in the at least one uniform region having the finishing aid during at least a portion of the finishing cycle time. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
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providing the tracked semiconductor wafer having tracked information; providing a finishing surface; providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface having a first uniform region and a second uniform region; providing a finishing control subsystem having; at least three operative process sensors for sensing in situ process information during the finishing cycle time; access to the tracked information; and a processor to evaluate the in situ process information and the tracked information; applying an operative finishing motion in the interface forming a first uniform region having the finishing aid and wherein the first and the second uniform regions have different finishing rates measured in angstroms per minute; and changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information and wherein changing the control parameters changes the a finishing rate measured in angstroms per minute in at least one uniform region during at least a portion of the finishing cycle time. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
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56. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
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providing the tracked semiconductor wafer having tracked information; providing a finishing surface; providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface; providing a finishing control subsystem having; at least three operative process sensors for sensing in situ process information during the finishing cycle time; access to the tracked information; and a processor to evaluate the in situ process information and the tracked information; applying an operative finishing motion in a finishing interface having a first region and a second region and wherein at least the first uniform region has a finishing aid and wherein the first and the second regions have different finishing rates measured in angstroms per minute; evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information; and changing a plurality of control parameters to change the finishing rate measured in angstroms per minute in at least one of the regions during the finishing cycle time. - View Dependent Claims (57, 58)
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59. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:
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providing the tracked semiconductor wafer having tracked information; providing a finishing surface; providing a finishing aid to an interface formed between the finishing surface and the semiconductor wafer surface; providing a finishing control subsystem having; at least five operative process sensors for sensing in situ process information during the finishing cycle time; access to the tracked information; and a processor to evaluate the in situ process information and the tracked information; applying an finishing motion in the interface forming at least one uniform region having the finishing aid and a differential finishing rate measured in angstroms per minute on the semiconductor wafer surface; evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information; and changing a plurality of control parameters to change the differential finishing rate measured in angstroms per minute on the semiconductor wafer surface during the finishing cycle time. - View Dependent Claims (60)
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61. A method for finishing a semiconductor wafer having at least one uniform region and having tracked information, the method comprising:
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a step (A) providing a semiconductor wafer; a step (B) providing a finishing surface; a step (C) providing a finishing aid proximate the semiconductor wafer and wherein the finishing aid comprises a reactive finishing aid which reacts with at least portion of the semiconductor wafer surface changing the finishing rate in angstroms per minute when compared to the finishing rate under identical finishing conditions but in the absence of the reactive finishing aid; a step (D) providing at least one finishing control subsystem having at least three operative process sensors, at least one processor, and a controller and wherein the at least one processor for processing; (i) tracked information, and (ii) historical performance; a step (E) applying an operative finishing motion to an interface between the semiconductor wafer and the finishing surface and wherein the interface includes the finishing aid; a step (F) sensing an in situ finishing information with the at least three operative process sensors during a finishing cycle time; a step (G) evaluating a multiplicity of finishing information, and each having varying effects on the finishing with the finishing aid; a step (H) determining a change for at least two process control parameters using; (i) tracked information, (ii) historical performance, (iii) the in situ finishing information, and (iv) the step (G) of evaluating the multiplicity of finishing information; and a step (I) changing the at least two control parameters changes the finishing rate measured in angstroms per minute in the at least portion of the semiconductor wafer during the finishing cycle time. - View Dependent Claims (62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75)
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76. A method for finishing a semiconductor wafer having tracked information, the method comprising:
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a step (A) providing a semiconductor wafer; a step (B) providing a finishing surface; a step (C) providing a finishing aid proximate the semiconductor wafer and wherein the finishing aid differentially reacts with heterogeneous regions of a semiconductor wafer surface being finished; a step (D) providing at least one finishing control subsystem having at least three operative process sensors, at least one processor, and a controller and wherein the at least one processor for processing; (i) the tracked information, and (ii) historical performance including a quantity of historical performance of prior semiconductor wafers; a step (E) applying an operative finishing motion to an interface between the semiconductor wafer and the finishing surface and wherein the interface includes the finishing aid; a step (F) sensing an in situ finishing information with the at least three operative process sensors during a finishing cycle time; a step (G) evaluating a multiplicity of finishing information, and each having varying effects on the finishing with the finishing aid; a step (H) determining a change for at least two process control parameters using; (i) the tracked information, (ii) the historical performance including the quantity of historical performance of prior semiconductor wafers, (iii) the in situ finishing information, and (iv) the step (G) of evaluating the multiplicity of finishing information; and a step (I) changing the at least two of control parameters to change a finishing rate measured in angstroms per minute on at least one region of semiconductor wafer surface during the finishing cycle time. - View Dependent Claims (77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96)
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97. A method for finishing a semiconductor wafer having tracked information, the method comprising:
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a step (A) providing a semiconductor wafer and wherein the semiconductor wafer surface has a first uniform region and a second uniform region; a step (B) providing a finishing surface; a step (C) providing a finishing aid proximate the semiconductor wafer; a step (D) providing at least one finishing control subsystem having at least three operative process sensors, at least one processor, and a controller and wherein the at least one processor for processing; (i) the tracked information, and (ii) historical performance including a quantity of historical tracked information of the workpiece and a quantity of historical tracked information of prior workpieces; a step (E) applying an operative finishing motion to an interface between the semiconductor wafer and the finishing surface and wherein the interface includes the finishing aid in the first uniform region; a step (F) sensing an in situ finishing information with the at least three operative process sensors during a finishing cycle time; a step (G) evaluating a multiplicity of finishing information, and each having varying effects on the finishing with the finishing aid; a step (H) determining a change for at least two process control parameters using; (i) the tracked information, (ii) historical performance including the quantity of historical tracked information of the workpiece and the quantity of historical tracked information of prior workpieces, (iii) the in situ finishing information, and (iv) the step (G) of evaluating the multiplicity of finishing information; and a step (I) changing the at least two control parameters to change a finishing rate measured in angstroms per minute on at least the first uniform region of semiconductor wafer surface during the finishing cycle time; a step (J) storing at a least a portion of the information in the step (H) forming a family of stored information; a step (K) using the family of stored information to determine a change for at least one particular member of the family of stored information; a step (L) changing the at least one particular member in the family of stored information forming a changed family of stored information; and a step (M) using the changed family of stored information. - View Dependent Claims (98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118)
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119. A method for finishing a semiconductor wafer having tracked information, the method comprising:
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a step (A) providing a semiconductor wafer and wherein the semiconductor wafer surface has a first uniform region and a second uniform region; a step (B) providing a finishing surface; a step (C) providing a finishing aid proximate the semiconductor wafer; a step (D) providing at least one finishing control subsystem having at least three operative process sensors, at least one processor, and a controller and wherein the at least one processor for processing; (i) the tracked information, and (ii) historical performance including a quantity of historical tracked information of the workpiece and a quantity of historical tracked information of prior workpieces; a step (E) applying an operative finishing motion to an interface between the semiconductor wafer and the finishing surface and wherein the interface includes the finishing aid in the first uniform region; a step (F) sensing an in situ finishing information with the at least three operative process sensors during a finishing cycle time; a step (G) evaluating a multiplicity of finishing information, and each having varying effects on the finishing with the finishing aid; a step (H) determining a change for at least two process control parameters using; (i) the tracked information, (ii) historical performance including the quantity of historical tracked information of the workpiece and the quantity of historical tracked information of prior workpieces; (iii) the in situ finishing information, and (iv) the step (G) of evaluating the multiplicity of finishing information; and a step (I) changing the at least two control parameters to change a tangential force of friction in at least the first uniform region of semiconductor wafer surface during the finishing cycle time; a step (J) storing at a least a portion of the information in the step (H) forming a family of stored information; a step (K) using the family of stored information to determine a change for at least one particular member of the family of stored information; a step (L) changing the at least one particular member in the family of stored information forming a changed family of stored information; and a step (M) using the changed family of stored information. - View Dependent Claims (120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139)
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Specification
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Litigation Data
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Current AssigneeSemcon Tech LLC (IPNav)
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Original AssigneeBeaver Creek Concepts, Inc.
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InventorsMolnar, Charles J.
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Primary Examiner(s)Wilson, Lee D.
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Assistant Examiner(s)OJINI, EZIAMARA ANTHONY
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Application NumberUS10/724,535Publication NumberTime in Patent Office1,130 DaysField of Search451/4, 451/5, 451 8- 11, 451/41, 451/285, 451286-290, 438690-693, 438/745, 438/753, 438/756, 438/757, 216/38, 216/88, 216/89, 252/79.1, 156/345US Class Current451/5CPC Class CodesB24B 37/013 Devices or means for detect...B24B 49/04 involving measurement of th...
