Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
DCFirst Claim
1. A reagent for use in a thin film deposition process, the reagent comprising Hf(NEtMe)4.
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Accused Products
Abstract
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
42 Citations
11 Claims
- 1. A reagent for use in a thin film deposition process, the reagent comprising Hf(NEtMe)4.
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4. A liquid having the formula Hf(NEtMe)4.
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5. A compound having the formula Hf(NEtMe)4.
- 6. A reagent for use in a thin film deposition process, the reagent comprising W(NtBu)2(NMeR)2 where R is one of Me and Et.
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10. A liquid having the formula W(NtBu)2(NMeR)2 where R is one of Me and Et.
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11. A compound having the formula W(NtBu)2(NMeR)2 where R is one of Me and Et.
Specification