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Solid-state imaging device

DC
  • US 8,004,026 B2
  • Filed: 03/09/2010
  • Issued: 08/23/2011
  • Est. Priority Date: 03/07/2003
  • Status: Expired due to Term
First Claim
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1. A solid-state imaging device, comprising:

  • a plurality of photodiodes configured to perform optical-electrical conversion, each of the photodiodes being two-dimensionally arranged in row and column directions on a semiconductor substrate;

    a plurality of transfer gates configured to transfer a signal electric charge obtained from performing the optical-electrical conversion, each of the transfer gates being provided on the semiconductor substrate for a corresponding one of the photodiodes;

    a plurality of floating diffusion layers configured to temporarily store the transferred signal electric charge, each of the floating diffusion layers being provided for at least one of the corresponding photodiodes and at least one of the corresponding transfer gates;

    an amplifier transistor configured to amplify the signal electric charge supplied to a gate thereof;

    the amplifier transistor being provided on the semiconductor substrate;

    a reset transistor configured to reset the signal electric charge stored in the floating diffusion layer, the reset transistor being provided on the semiconductor substrate;

    a vertical signal line configured to output a signal corresponding to the signal electric charge in the floating diffusion layer,a signal line connecting a floating diffusion layer with a gate of an amplifier transistor, the signal line including a portion disposed in a column direction;

    a first contact configured to receive an output of a source of the amplifier transistor;

    a second contact connected to a drain of the reset transistor; and

    a third contact connected to a source of the reset transistor,wherein a gate of the amplifier transistor is connected, in the column direction, to at least one of the plurality of floating diffusion layers,the gate of the amplifier transistor and the floating diffusion layer connected thereto are formed in different active regions respectively, andthe first, second, and third contacts are aligned in a straight line.

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