Semiconductor device
DC
First Claim
1. A semiconductor device including a multilayer wiring comprising:
- a semiconductor substrate;
an insulating film formed on the semiconductor substrate, at least one part of the insulating film being formed of a first insulating film and a second insulating film;
a wiring groove and a via hole formed in the insulating film;
a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and
a modified layer formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film,wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon,the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, andthe modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film.
2 Assignments
Litigations
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Accused Products
Abstract
The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.
21 Citations
11 Claims
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1. A semiconductor device including a multilayer wiring comprising:
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a semiconductor substrate; an insulating film formed on the semiconductor substrate, at least one part of the insulating film being formed of a first insulating film and a second insulating film; a wiring groove and a via hole formed in the insulating film; a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and a modified layer formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film, wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon, the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, and the modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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- Resources
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneeNEC Corporation
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InventorsTada, Munehiro, Ohtake, Hiroto, Ito, Fuminori, Hayashi, Yoshihiro, Yamamoto, Hironori
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Primary Examiner(s)VU, HUNG K
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Application NumberUS13/238,796Publication NumberTime in Patent Office377 DaysField of Search257758-760, 257/762, 257/773, 257/774, 257/21.261, 257/E21.575US Class Current257/774CPC Class CodesH01L 21/02126 the material containing Si,...H01L 21/02216 the compound being a molecu...H01L 21/02274 in the presence of a plasma...H01L 21/0234 treatment by exposure to a ...H01L 21/31633 Deposition of carbon doped ...H01L 21/76807 for dual damascene structuresH01L 21/76808 involving intermediate temp...H01L 21/76814 post-treatment or after-tre...H01L 21/76826 by contacting the layer wit...H01L 21/76829 characterised by the format...H01L 21/76831 in via holes or trenches, e...H01L 21/76832 Multiple layersH01L 21/76835 Combinations of two or more...H01L 23/53238 Additional layers associate...H01L 23/5329 Insulating materialsH01L 23/53295 Stacked insulating layersH01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
