Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
DC CAFC
First Claim
1. A process for making an insulator in a microelectronic device, the process comprising:
- introducing a first reactant component into a deposition chamber;
introducing a second reactant component into the deposition chamber; and
alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber;
wherein deposition of the first reactant component and the second reactant component are self-limiting;
wherein said first reactant component comprises a metal alkylamide;
wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and
wherein said insulator comprises oxygen and the metal from the metal alkylamide.
2 Assignments
Litigations
3 Petitions
Accused Products
Abstract
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
52 Citations
10 Claims
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1. A process for making an insulator in a microelectronic device, the process comprising:
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introducing a first reactant component into a deposition chamber; introducing a second reactant component into the deposition chamber; and alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber; wherein deposition of the first reactant component and the second reactant component are self-limiting; wherein said first reactant component comprises a metal alkylamide; wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and wherein said insulator comprises oxygen and the metal from the metal alkylamide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification
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- Resources
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Current AssigneePresident and Fellows of Harvard College (Harvard Corporation)
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Original AssigneePresident and Fellows of Harvard College (Harvard Corporation)
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InventorsHausmann, Dennis, Suh, Seigi, Gordon, Roy G., Becker, Jill S.
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Primary Examiner(s)CHEN, BRET P
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Application NumberUS12/407,556Publication NumberTime in Patent Office1,370 DaysField of Search427/255.31, 427/255.36, 117/84, 117/88US Class Current427/255.31CPC Class CodesC01B 13/34 by oxidation or hydrolysis ...C01B 25/30 Alkali metal phosphatesC01B 25/36 Aluminium phosphatesC01B 33/126 Preparation of silica of un...C01B 33/20 Silicates persilicates C01B...C01B 33/26 Aluminium-containing silica...C01G 25/02 OxidesC01G 27/02 OxidesC01G 35/00 Compounds of tantalumC07F 9/091 with hydroxyalkyl compounds...C07F 9/11 with hydroxyalkyl compounds...C23C 16/30 Deposition of compounds, mi...C23C 16/40 OxidesC23C 16/401 containing siliconC23C 16/402 Silicon dioxideC23C 16/405 of refractory metals or ytt...C23C 16/455 characterised by the method...C23C 16/45525 Atomic layer deposition [ALD]C23C 16/45531 specially adapted for makin...C23C 16/45553 characterized by the use of...View All
