MOS image pick-up device and camera incorporating the same
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First Claim
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1. A MOS (metal-oxide-semiconductor) image pick-up device comprising:
- a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation portion comprising a portion next to the photodiode and a portion not next to the photodiode, and the peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following are satisfied;
I. each of the first device-isolation portion not next to the photodiode and the second device-isolation portion has a structure comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. both an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm and an impurity diffusion region formed within the substrate, and II. each of the first device-isolation portions next to the photodiode has a structure consisting of only an impurity diffusion region formed within the substrate directly under the substrate surface.
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Abstract
A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.
11 Citations
13 Claims
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1. A MOS (metal-oxide-semiconductor) image pick-up device comprising:
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a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation portion comprising a portion next to the photodiode and a portion not next to the photodiode, andthe peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following are satisfied;
I. each of the first device-isolation portion not next to the photodiode and the second device-isolation portion has a structure comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. both an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm and an impurity diffusion region formed within the substrate, and II. each of the first device-isolation portions next to the photodiode has a structure consisting of only an impurity diffusion region formed within the substrate directly under the substrate surface. - View Dependent Claims (2, 3, 4, 5)
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6. A camera comprising a MOS (metal-oxide-semiconductor) image pick-up device comprising:
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a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation portion comprising a portion next to the photodiode and a portion not next to the photodiode, andthe peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following are satisfied;
I. each of the first device-isolation portion not next to the photodiode and the second device-isolation portion has a structure comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. both an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm and an impurity diffusion region formed within the substrate, and II. each of the first device-isolation portions next to the photodiode has a structure consisting of only an impurity diffusion region formed within the substrate directly under the substrate surface. - View Dependent Claims (7, 8, 9, 10)
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11. A MOS (metal-oxide-semiconductor) image pick-up device comprising:
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a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation potion, andthe peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following are satisfied;
I. the first device-isolation portion has a structure comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. an impurity diffusion region formed within the substrate directly under the substrate surface, and II. the first device-isolation portion and the second device-isolation portion have respective structures selected separately so as to be different from each other.
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12. A MOS (metal-oxide-semiconductor) image pick-up device comprising:
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a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation portion, andthe peripheral circuit region comprises a second device-isolation portion or isolating devices in the driving circuit, wherein the following is satisfied;
the first device-isolation portion and the second device-isolating portion are selected separately from respective structures comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. an impurity diffusion region formed within the substrate directly under the substrate surface.
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13. A camera comprising a MOS (metal-oxide-semiconductor) image pick-up device comprising:
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a semiconductor substrate;
an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;
where each of the unit pixels comprises;
a photodiode, MOS transistors, and a first device-isolation portion, andthe peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following is satisfied;
I. the first device-isolation portion has a structure comprising;
A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. an impurity diffusion region formed within the substrate directly under the substrate surface, and II. the first device-isolation portion and the second device-isolation portion have respective structures selected separately so as to be different from each other.
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Specification
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Litigation Data
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneePanasonic Corporation (Panasonic Holdings Corporation)
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InventorsYamaguchi, Takumi
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Primary Examiner(s)Jackson, Jr.; Jerome
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Application NumberUS12/397,560Time in Patent Office601 DaysField of Search257/292US Class Current257/292CPC Class CodesH01L 27/14609 Pixel-elements with integra...H01L 27/14643 Photodiode arrays; MOS imagers
