Semiconductor interconnect formed over an insulation and having moisture resistant material
DCFirst Claim
1. A semiconductor device comprising:
- a semiconductor substrate bearing semiconductor elements;
an interlayer insulating film formed on said semiconductor substrate;
a metal wire layer including plural metal wires formed on said interlayer insulating film;
a surface protecting film including a first dielectric film with a small dielectric constant for filling at least a part of areas among said metal wires in said metal wire layer and a second dielectric film with a higher moisture absorption preventing function than said first dielectric film for covering said metal wire layer and said first dielectric film, said second dielectric film having a function of suppressing moisture absorption of said first dielectric film;
an opening for a bonding pad formed in said surface protecting film; and
a bonding pad forming in said opening for obtaining external electrical connection, wherein said bonding pad and said second dielectric film of said surface protecting film completely cover said first dielectric film within said opening so as not to expose said first dielectric film.
1 Assignment
Litigations
4 Petitions
Accused Products
Abstract
A plurality of metal wires are formed on an underlying interlayer insulating film. Areas among the metal wires are filled with a buried insulating film of a silicon oxide film with a small dielectric constant (i.e., a first dielectric film), and thus, a parasitic capacitance of the metal wires can be decreased. On the buried insulating film, a passivation film of a silicon nitride film with high moisture absorption resistance (i.e., a second dielectric film) is formed, and thus, a coverage defect can be avoided. A bonding pad is buried in an opening formed in a part of a surface protecting film including the buried insulating film and the passivation film, so as not to expose the buried insulating film within the opening. Thus, moisture absorption through the opening can be prevented. In this manner, the invention provides a semiconductor device which has a small parasitic capacitance in an area with a small pitch between the metal wires and is free from a coverage defect as well as the moisture absorption through the opening for the bonding pad, and a method of manufacturing the semiconductor device.
21 Citations
51 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate bearing semiconductor elements;
an interlayer insulating film formed on said semiconductor substrate;
a metal wire layer including plural metal wires formed on said interlayer insulating film;
a surface protecting film including a first dielectric film with a small dielectric constant for filling at least a part of areas among said metal wires in said metal wire layer and a second dielectric film with a higher moisture absorption preventing function than said first dielectric film for covering said metal wire layer and said first dielectric film, said second dielectric film having a function of suppressing moisture absorption of said first dielectric film;
an opening for a bonding pad formed in said surface protecting film; and
a bonding pad forming in said opening for obtaining external electrical connection, wherein said bonding pad and said second dielectric film of said surface protecting film completely cover said first dielectric film within said opening so as not to expose said first dielectric film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a semiconductor substrate bearing semiconductor elements;
an interlayer insulating film formed on said semiconductor substrate;
a metal wire layer including plural metal wires formed on said interlayer insulating film;
a surface protecting film including a first dielectric film with a small dielectric constant for filling at least a part of areas among said metal wires in said metal wire layer and a second dielectric film with a higher moisture absorption preventing function than said first dielectric film for covering said metal wire layer and said first dielectric film, said second dielectric film having a function of suppressing moisture absorption of said first dielectric film;
an opening for a bonding pad formed in said surface protecting film; and
a bonding pad formed in said opening for obtaining external electrical connection, wherein said bonding pad in said opening and said second dielectric film of said surface protecting film completely cover said first dielectric film so as not to expose said first dielectric film. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A semiconductor device comprising:
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a semiconductor substrate bearing semiconductor elements;
an interlayer insulating film formed on said semiconductor substrate;
a metal wire layer including plural metal wires formed on said interlayer insulating film;
a surface protecting film including a first dielectric film with a small dielectric constant for filling at least a part of areas among said metal wires in said metal wire layer and a second dielectric film with a higher moisture absorption preventing function than said first dielectric film for covering said metal wire layer and said first dielectric film, said second dielectric film having a function of suppressing moisture absorption of said first dielectric film;
an opening for a bonding pad formed in said surface protecting film; and
a bonding pad formed in said opening for obtaining external electrical connection, wherein said bonding pad covers said opening and said second dielectric film of said surface protecting film completely covers said first dielectric film so as not to expose said first dielectric film. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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Specification