Light for use in activating light-activated materials, the light having a plurality of light emitting single chip arrays
First Claim
Patent Images
1. A light for activating a light-activated material comprising:
- a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, a plurality of light emitting single chip arrays, said single chip arrays being mounted to said heat sink, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “
n”
, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “
λ
1”
, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “
λ
n”
, the wavelength of λ
1 being less than λ
n, each of said light emitting single chip arrays peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n, λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n, each of said light emitting single chip arrays emitting light of an intensity Ii, where “
i”
is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “
I1”
, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “
In”
, the intensity of I1 being less than or equal to the intensity of In and the intensity of light emitted by a particular chip “
i”
being designated I1 where Ii is greater than or equal to I1 and where Ii is less than or equal to In;
wherein the intensity of Ii of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i.
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Abstract
Light system useful for activating light-activated materials are disclosed. Various configurations of light emitting semiconductor chips and heat sinks are disclosed, as well as various structures and methods for driving, controlling and using them, and materials and structures usable therewith.
53 Citations
60 Claims
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1. A light for activating a light-activated material comprising:
-
a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, a plurality of light emitting single chip arrays, said single chip arrays being mounted to said heat sink, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “
n”
, where n is greater than or equal to 2,each of said light emitting single chip arrays emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “
λ
n”
,the wavelength of λ
1 being less than λ
n,each of said light emitting single chip arrays peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting single chip arrays emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than or equal to the intensity of In and the intensity of light emitted by a particular chip “
i”
being designated I1 where Ii is greater than or equal to I1 and where Ii is less than or equal to In;
wherein the intensity of Ii of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 59, 60)
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29. A light for activating a light-activated material comprising:
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a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink exhibiting thermal conductivity, a plurality of light emitting single chip arrays being mounted to said heat sink, each of said single chip arrays having a substrate and a volume of semiconductor material on said substrate, each of said single chip arrays having an electrode strip along at least one of its sides, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “
n”
, where n is greater than or equal to 2,each of said light emitting single chip arrays emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “
λ
n”
,the wavelength of λ
1 being less than λ
n,each of said light emitting single chip arrays peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting single chip arrays emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than or equal to the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than or equal to I1 and where Ii is less than or equal to In;
wherein the intensity of Ii of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i;
wherein Ii for at least one of said plurality of light emitting single chip arrays is at least 40 mW; and
wherein λ
1 is greater than or equal to 200 nm.
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58. A light for activating a light-activated material comprising:
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a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, at least one well on said heat sink, said well having a bottom, said well having a wall, a plurality of light emitting single chip arrays, at least one of said single chip arrays being mounted in said well, said well wall serving to reflect light from said chip array that strikes it in a useful direction, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “
n”
, where n is greater than or equal to 2,each of said light emitting single chip arrays emitting light of a certain peak wavelength λ
i, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “
λ
1”
,a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “
λ
n”
,said light emitting single chip arrays being selected so that the wavelength of λ
1 is measurably less than λ
n,each of said light emitting single chip arrays peak wavelengths λ
i being greater than or equal to λ
1 and less than or equal to λ
n,λ
1 and λ
n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays,said peak wavelength limits λ
1 and λ
n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ
1 . . . λ
n,each of said light emitting single chip arrays emitting light of an intensity Ii, where “
i”
is an integer between 1 and n,a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “
I1”
,a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “
In”
,the intensity of I1 being less than or equal to the intensity of In, and the intensity of light emitted by a particular chip “
i”
being designated Ii where Ii is greater than or equal to I1 and where Ii is less than or equal to In;
wherein the intensity of Ii of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ
i.
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Specification