Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
First Claim
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1. A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
- reacting the vapor of one of an alkoxysilanol and an alkoxysilanediol together with a vapor of one or more of a metal compound and a metalloid compound.
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Abstract
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 ° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 ° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
508 Citations
32 Claims
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1. A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
reacting the vapor of one of an alkoxysilanol and an alkoxysilanediol together with a vapor of one or more of a metal compound and a metalloid compound. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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2. A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
exposing a substrate alternately to the vapor of one or an alkoxysilanol and an alkoxysilanediol and the vapor of one or more of a metal compound or a metalloid compound to form a film on the substrate.
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12. A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
reacting a vapor of a bis(alkyl)phosphate with a vapor of one or more of a metal compound and a metalloid compound. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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13. A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
exposing a substrate alternately to a vapor of a bis(alkyl)phosphate and a vapor of one or more of a metal compound and metalloid compound to form a film on the substrate. - View Dependent Claims (21)
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22. A process for forming a material comprising silicon, comprising:
exposing a substrate to one or more vapors chosen from the group consisting of alkoxysilanols, alkoxysilanediols and silylenes. - View Dependent Claims (23, 24)
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25. A process for forming a material comprising phosphorus, comprising:
exposing a substrate to one or more vapors selected from the group consisting of bis(alkyl)phosphates, phosphorus(III) oxide and white phosphorus.
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26. A process for forming a material comprising oxygen, comprising:
exposing a substrate to one or more vapors chosen from the group consisting of arene hydrates. - View Dependent Claims (27)
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28. A process for forming a metal oxide, comprising:
exposing a heated surface alternately to the vapor of one or more metal amides and then to the vapors of water or an alcohol. - View Dependent Claims (29, 30)
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31. A process for forming material comprising oxygen and one or more metals, comprising:
exposing a surface alternately to the vapor of one or more organometallic compounds and then to the vapors of an arene hydrate. - View Dependent Claims (32)
Specification
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Current AssigneePresident and Fellows of Harvard College (Harvard Corporation)
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Original AssigneePresident and Fellows of Harvard College (Harvard Corporation)
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InventorsHausmann, Dennis, Gordon, Roy G., Becker, Jill, Suh, Seigi
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current427/255.31
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CPC Class CodesC01B 13/34 by oxidation or hydrolysis ...C01B 25/30 Alkali metal phosphatesC01B 25/36 Aluminium phosphatesC01B 33/126 Preparation of silica of un...C01B 33/20 Silicates persilicates C01B...C01B 33/26 Aluminium-containing silica...C01G 25/02 OxidesC01G 27/02 OxidesC01G 35/00 Compounds of tantalumC07F 9/091 with hydroxyalkyl compounds...C07F 9/11 with hydroxyalkyl compounds...C23C 16/30 Deposition of compounds, mi...C23C 16/40 OxidesC23C 16/401 containing siliconC23C 16/402 Silicon dioxideC23C 16/405 of refractory metals or ytt...C23C 16/455 characterised by the method...C23C 16/45525 Atomic layer deposition [ALD]C23C 16/45531 specially adapted for makin...C23C 16/45553 characterized by the use of...View All
