Semiconductor light-emitting device and method for manufacturing the same
First Claim
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1. A semiconductor light-emitting device comprising:
- a substrate;
a first electrode disposed on a first surface of said substrate;
a textured district defined on the second surface of said substrate;
a first layer disposed on said textured district comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer;
a lower cladding layer disposed on said first layer;
an active layer bound by a lower and an upper confining layer disposed on said lower cladding layer;
an upper cladding layer disposed on said upper confining layer;
a window layer disposed on said upper cladding layer;
a contact layer disposed on said window layer; and
a second electrode disposed on said contact layer.
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Abstract
Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves to guide the extended defects to designated gettering centers in the trench region where the defects combine with each other. As a result, the defect density in the upper section of the structure is much reduced. By incorporating a blocking mask in the structure, the free propagation of extended defects into the active layer is further restricted. The present invention is useful in the fabrication of semiconductor light emitting devices in misfit systems.
116 Citations
19 Claims
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1. A semiconductor light-emitting device comprising:
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a substrate;
a first electrode disposed on a first surface of said substrate;
a textured district defined on the second surface of said substrate;
a first layer disposed on said textured district comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer;
a lower cladding layer disposed on said first layer;
an active layer bound by a lower and an upper confining layer disposed on said lower cladding layer;
an upper cladding layer disposed on said upper confining layer;
a window layer disposed on said upper cladding layer;
a contact layer disposed on said window layer; and
a second electrode disposed on said contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification
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Current AssigneeLexington Luminance LLC
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Original AssigneeTien Yang Wang
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InventorsWang, Tien Yang
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/74
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CPC Class CodesH01L 21/0237 MaterialsH01L 21/02395 ArsenidesH01L 21/0243 Surface structureH01L 21/02439 MaterialsH01L 21/02505 consisting of more than two...H01L 21/02521 MaterialsH01L 21/0262 Reduction or decomposition ...H01L 21/02639 Preparation of substrate fo...H01L 21/02647 Lateral overgrowthH01L 21/02658 Pretreatments cleaning in g...H01L 27/153 in a repetitive configurati...H01L 33/005 Processes
