Semiconductor device and method for fabricating the same
First Claim
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1. A semiconductor device comprising:
- a first active region surrounded with an isolation region of a semiconductor substrate;
a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region;
a first side-wall insulating film formed on the side surface of the first gate electrode;
an auxiliary pattern formed over the semiconductor substrate to be spaced apart in the gate width direction from the protrusion of the first gate electrode;
a second side-wall insulating film formed on the side surface of the auxiliary pattern; and
a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film,wherein the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of;
the sum of the thicknesses of the first and second side-wall insulating films; and
the double of the thickness of the stress-containing insulating film.
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Abstract
A semiconductor device includes: a first active region surrounded with an isolation region of a semiconductor substrate; a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region; a first side-wall insulating film; an auxiliary pattern formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film; and a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film. In this device, the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of: the sum of the thicknesses of the first and second side-wall insulating films; and the double of the thickness of the stress-containing insulating film.
24 Citations
24 Claims
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1. A semiconductor device comprising:
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a first active region surrounded with an isolation region of a semiconductor substrate; a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region; a first side-wall insulating film formed on the side surface of the first gate electrode; an auxiliary pattern formed over the semiconductor substrate to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film formed on the side surface of the auxiliary pattern; and a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film, wherein the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of;
the sum of the thicknesses of the first and second side-wall insulating films; and
the double of the thickness of the stress-containing insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for fabricating a semiconductor device, comprising:
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the step (a) of forming a first active region surrounded with an isolation region of a semiconductor substrate; the step (b) of forming, over the first active region, a first gate electrode having a protrusion protruding on the isolation region; the step (c) of forming an auxiliary pattern over the semiconductor substrate to be spaced apart in the gate width direction from the protrusion of the first gate electrode; the step (d) of forming a first side-wall insulating film on the side surface of the first gate electrode and a second side-wall insulating film on the side surface of the auxiliary pattern; and the step (e) of forming a stress-containing insulating film to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film, the stress-containing insulating film containing internal stress, wherein in the step (c), the auxiliary pattern is formed so that the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of;
the sum of the thicknesses of the first and second side-wall insulating films; and
the double of the thickness of the stress-containing insulating film. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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Specification
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Current AssigneeGodo Kaisha IP Bridge 1 (IP Bridge, Inc.)
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Original AssigneePanasonic Corporation (Panasonic Holdings Corporation)
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InventorsTsutsui, Masafumi
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/412
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CPC Class CodesH01L 21/823412 with a particular manufactu...H01L 21/823468 with a particular manufactu...H01L 21/823481 isolation region manufactur...H01L 21/823807 with a particular manufactu...H01L 21/823864 with a particular manufactu...H01L 21/823878 isolation region manufactur...H01L 29/665 using self aligned silicida...H01L 29/6653 using the removal of at lea...H01L 29/6656 using multiple spacer layer...H01L 29/6659 with both lightly doped sou...H01L 29/7842 means for exerting mechanic...H01L 29/7843 the means being an applied ...
