Self-aligned split gate eprom process
DC CAFC
First Claim
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1. A method of manufacturing a memory cell containing a split gate transistor comprising:
- forming first polycrystalline silicon on, but separated from a semiconductor substrate by first insulation, said first polycrystalline silicon defining a floating gate having a first edge and a second edge opposite said first edge;
forming a photoresist pattern over said substrate and over a surface of said first polycrystalline silicon, said surface extending laterally between the first and second edges, a first opening being formed in said photoresist pattern to expose both the first edge of said floating gate and a first portion of the semiconductor substrate extending laterally from said first edge and a second opening being formed in said photoresist pattern to expose a second portion of the semiconductor substrate laterally spaced apart from said floating gate;
implanting selected impurities into those portions of the semiconductor substrate exposed by the openings of said photoresist thereby to form a source region laterally spaced apart from said floating gate and a drain region extending from but self-aligned to the first edge of said floating gate.
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Abstract
A self-aligned split gate single transistor memory cell structure is formed by a process which self aligns the drain region to one edge of a floating gate. The portion of the channel underneath the floating gate is accurately defined by using one edge of the floating gate to align the drain region. The control gate formed over the floating gate controls the portion of the channel region between the floating gate and the source to provide split gate operation. The source region is formed sufficiently far from the floating gate so that the channel length between the source region and the closest edge of the floating gate is controlled by the control gate but does not have to be accurately defined.
49 Citations
8 Claims
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1. A method of manufacturing a memory cell containing a split gate transistor comprising:
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forming first polycrystalline silicon on, but separated from a semiconductor substrate by first insulation, said first polycrystalline silicon defining a floating gate having a first edge and a second edge opposite said first edge; forming a photoresist pattern over said substrate and over a surface of said first polycrystalline silicon, said surface extending laterally between the first and second edges, a first opening being formed in said photoresist pattern to expose both the first edge of said floating gate and a first portion of the semiconductor substrate extending laterally from said first edge and a second opening being formed in said photoresist pattern to expose a second portion of the semiconductor substrate laterally spaced apart from said floating gate; implanting selected impurities into those portions of the semiconductor substrate exposed by the openings of said photoresist thereby to form a source region laterally spaced apart from said floating gate and a drain region extending from but self-aligned to the first edge of said floating gate. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a split gate transistor having an insulated floating gate overlying a channel region of the transistor and a control gate extending over the floating gate, the method comprising:
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forming a first insulative layer extending laterally on a semiconductor substrate; forming a first poly layer made of polycrystalline silicon on the first insulative layer; patterning the first poly layer to include opposed first and second edges defining opposed ends of the floating gate; forming a photoresist layer over the first poly layer; patterning the photoresist layer so that the first edge of the first poly layer and a surface portion of the first poly layer extending laterally from the first edge are exposed to define a peripheral portion of a drain implantation window; further patterning the photoresist layer to cover the second edge of the first poly layer and to extend laterally beyond the second edge of the first poly layer to terminate at an edge of the photoresist layer to thereby define a peripheral portion of a source implantation window, the edge of the photoresist layer being positioned such that the source implantation window is spaced apart from the floating gate; and implanting impurities through the source and drain implantation windows to form respective source and drain regions of the transistor, the drain region being self aligned thereby to the first edge of the floating gate and the source region being spaced apart from the floating gate. - View Dependent Claims (6)
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7. A manufacturing method for assuring consistency over process variations in the effective channel length of a plurality of split gate transistors which are to be formed each to have a floating gate laterally spaced apart from a source region of the transistor, the method comprising:
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insulatively disposing the floating gate of each transistor on a semiconductive substrate; forming a photoresistive coating on the floating gate of each transistor, the coating extending laterally beyond the floating gate to cover the substrate; creating a first opening in the coating to expose an edge portion of the floating gate of each transistor and a first portion of the substrate directly adjacent to the edge portion; creating a second opening in the coating, laterally spaced apart from the floating gate, to expose a second portion of the substrate; and implanting doping impurities through the first and second openings to create for each of the plurality of transistors a drain region which is self-aligned to the edge portion of the floating gate of the transistor and a source region which is spaced apart from the floating gate of the transistor. - View Dependent Claims (8)
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Litigation Data
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Current AssigneeUnited Module Corporation
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Original AssigneeWaferscale Integration, Inc. (STMicroelectronics NV)
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InventorsEitan, Boaz
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Primary Examiner(s)Hearn, Brian E.
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Assistant Examiner(s)Thomas, Tom
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Application NumberUS06/900,065Time in Patent Office865 DaysField of Search357/23.5, 357/54, 357/71, 148/DIG. 141, 148/DIG. 109, 29/576 B, 29/571, 29/577 C, 29/578US Class Current438/266CPC Class CodesH01L 29/40114 the electrodes comprising a...H01L 29/7881 Programmable transistors wi...H10B 69/00 Erasable-and-programmable R...
