Image sensor and method for manufacturing the same
DC
First Claim
1. An image sensor, comprising:
- at least one photodiode formed on a semiconductor substrate;
multi-layer interlayer insulating films formed on the photodiode and stacked in at least two layers of oxide film having different density and the refractive index so that the density and the refractive index of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multi-layer interlayer insulating films proceed upward;
a light shield layer and an element-protecting film sequentially stacked on the multi-layer interlayer insulating film;
color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and
microlenses arranged on the positions corresponding to the color filters on the flattening layer.
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Abstract
The present invention discloses an image sensor and a method for manufacturing the same which is capable of increasing the light-collection efficiency of a photodiode. The image sensor comprises: at least one photodiode formed on a semiconductor substrate; multilayer interlayer insulating films formed on the photodiode and stacked in at least two layers so that the density of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multilayer interlayer insulating films proceed upward; a light shield layer and an element-protecting film sequentially stacked on the multilayer interlayer insulating film; color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and microlenses arranged on the positions corresponding to the color filters on the flattening layer. Therefore, the light-collection efficiency of the photodiode can be increased with an increased transmittance of a vertical light reaching to the photodiode by making the multilayer interlayer insulating films have a lower density as they proceed upward to decrease the refraction angle of the incident light penetrated through the microlenses and color filters.
25 Citations
12 Claims
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1. An image sensor, comprising:
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at least one photodiode formed on a semiconductor substrate; multi-layer interlayer insulating films formed on the photodiode and stacked in at least two layers of oxide film having different density and the refractive index so that the density and the refractive index of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multi-layer interlayer insulating films proceed upward; a light shield layer and an element-protecting film sequentially stacked on the multi-layer interlayer insulating film; color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and microlenses arranged on the positions corresponding to the color filters on the flattening layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing an image sensor, comprising the steps of:
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making at least one photodiode on a semiconductor substrate; forming on the photodiode multi-layer interlayer insulating films stacked in at least two layers of oxide film having different density and the refractive index so that the density and the refractive index of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multi-layer interlayer insulating films proceed upward; forming a light shield layer and an element-protecting film sequentially stacked on the multi-layer interlayer insulating film; forming color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and forming microlenses arranged on the positions corresponding to the color filters on the flattening layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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Specification
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- Resources
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Current AssigneeAI-CORE TECHNOLOGIES, LLC (Ascend Innovation Management, LLC)
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Original AssigneeHynix Semiconductor Incorporated (SK Hynix Inc.)
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InventorsRyu, Sang-wook
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Primary Examiner(s)Luu; Thanh X.
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Assistant Examiner(s)Ko; Tony
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Application NumberUS10/945,182Publication NumberTime in Patent Office1,317 DaysField of Search250/208.1, 250/226, 257/294, 257/223, 257/225, 257/215, 438/70, 438/57, 438/69, 438/73US Class Current250/208.1CPC Class CodesH01L 27/14621 Colour filter arrangementsH01L 27/14623 Optical shieldingH01L 27/14627 MicrolensesH01L 27/14632 Wafer-level processed struc...H01L 27/14685 Process for coatings or opt...H01L 27/14687 Wafer level processing
