Semiconductor device, wiring substrate, and method for manufacturing wiring substrate
DCFirst Claim
1. A semiconductor apparatus in which a semiconductor chip is mounted on a wiring substrate with Flip-Chip,wherein the wiring substrate comprises:
- a monolithic base substrate formed from any one of a silicon, a ceramic, or a photosensitive glass;
a wiring layer having an insulating layer and a wiring formed on a wiring layer formation surface which is one surface of the monolithic base substrate;
an electrode formed on a chip mounting surface which is a backside of the wiring layer formation surface of the monolithic base substrate; and
a through-electrode formed on the monolithic base substrate electrically connecting the wiring layer formed on the wiring layer formation surface and the electrode formed on the chip mounting surface,wherein a thermal expansion coefficient of the monolithic base substrate is equal to a thermal expansion coefficient of the semiconductor chip, and the thermal expansion coefficient of the monolithic base substrate is less than a thermal expansion coefficient of the wiring layer,wherein the semiconductor chip is bonded to the chip mounting surface with face-down.
2 Assignments
Litigations
1 Petition
Accused Products
Abstract
The reliabilities of a wiring substrate and a semiconductor apparatus are improved by reducing the internal stress caused by the difference of thermal expansion coefficients between a base substrate and a semiconductor chip. A wiring layer (5) is provided on one surface of a silicon base (3). An electrode as the uppermost layer of the wiring layer (5) is provided with an external bonding bump (7). A through-electrode (4) is formed in the base (3) for electrically connecting the wiring layer (5) and an electrode terminal. The electrode terminal on the chip mounting surface is bonded to an electrode terminal of a semiconductor chip (1) by an internal bonding bump (6). The thermal expansion coefficient of the silicon base (3) is equivalent to that of the semiconductor chip (1) and not more than that of the wiring layer (5).
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Citations
18 Claims
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1. A semiconductor apparatus in which a semiconductor chip is mounted on a wiring substrate with Flip-Chip,
wherein the wiring substrate comprises: -
a monolithic base substrate formed from any one of a silicon, a ceramic, or a photosensitive glass; a wiring layer having an insulating layer and a wiring formed on a wiring layer formation surface which is one surface of the monolithic base substrate; an electrode formed on a chip mounting surface which is a backside of the wiring layer formation surface of the monolithic base substrate; and a through-electrode formed on the monolithic base substrate electrically connecting the wiring layer formed on the wiring layer formation surface and the electrode formed on the chip mounting surface, wherein a thermal expansion coefficient of the monolithic base substrate is equal to a thermal expansion coefficient of the semiconductor chip, and the thermal expansion coefficient of the monolithic base substrate is less than a thermal expansion coefficient of the wiring layer, wherein the semiconductor chip is bonded to the chip mounting surface with face-down. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A wiring substrate which mounts a semiconductor chip with Flip-Chip,
wherein the wiring substrate comprises: -
a monolithic base substrate formed from any one of a silicon, a ceramic, or a photosensitive glass; a wiring layer having an insulating layer and a wiring formed on a wiring layer formation surface which is one surface of the monolithic base substrate; an electrode formed on a chip mounting surface which is a backside of the wiring layer formation surface of the monolithic base substrate; and a through-electrode formed on the monolithic base substrate electrically connecting the wiring layer formed on the wiring layer formation surface and the electrode formed on the chip mounting surface, wherein a thermal expansion coefficient of the monolithic base substrate is equal to a thermal expansion coefficient of the semiconductor chip, and the thermal expansion coefficient of the monolithic base substrate is less than a thermal expansion coefficient of the wiring layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a wiring substrate which comprises a monolithic base substrate formed from any one of a silicon, a ceramic, or a photosensitive glass and a wiring layer having an insulating layer and a wiring formed on a wiring layer formation surface, which is one surface of the monolithic base substrate, and mounts a semiconductor chip with Flip-Chip, and a thermal expansion coefficient of the monolithic base substrate is equal to a thermal expansion coefficient of the semiconductor chip, and the thermal expansion coefficient of the monolithic base substrate is less than a thermal expansion coefficient of the wiring layer, the method comprising steps of:
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forming a half-through-hole from the wiring layer formation surface of the monolithic base substrate; forming a first electrode on the wiring layer formation surface by burying the half-through-hole with an electrically conductive material; forming the wiring layer on the wiring layer formation surface; and forming a second electrode for mounting the semiconductor chip by exposing the half-through-hole through thinning the monolithic base substrate from a backside of the wiring layer formation surface. - View Dependent Claims (14, 15)
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16. A method for manufacturing a wiring substrate which comprises a monolithic base substrate formed from any one of a silicon, a ceramic, or a photosensitive glass and a wiring layer formed on a wiring layer formation surface, which is one surface of the monolithic base substrate, and mounts a semiconductor chip with Flip-Chip, and a thermal expansion coefficient of the monolithic base substrate is equal to a thermal expansion coefficient of the semiconductor chip, and the thermal expansion coefficient of the monolithic base substrate is less than a thermal expansion coefficient of the wiring layer, the method comprising steps of:
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forming the wiring layer on the wiring layer formation surface of the monolithic base substrate; forming a through-hole which penetrates only the monolithic base substrate from a backside of the wiring layer formation surface of the monolithic base substrate; and forming an electrode for mounting the semiconductor chip at the backside of the wiring layer formation surface by burying the through-hole with an electrically conductive material. - View Dependent Claims (17, 18)
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Specification